Features: • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks Sixty-three 32K-word main memory blocks• VCC, VCCQ, VPP voltages*1.65V (MIN), 1.95V (MAX) VCC, VCCQ 0.9V (MIN), 1.95V (MAX) VPP (in-systemPROGRAM/ERASE)12V ±5% (HV) VPP tolerant (factory pro...
MT28F320A18: Features: • 32Mb block architecture Seventy-one erasable blocks: Eight 4K-word parameter blocks Sixty-three 32K-word main memory blocks• VCC, VCCQ, VPP voltages*1.65V (MIN), 1.95V (MAX) ...
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Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
Features: • Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 3...
The MT28F320A18 is a nonvolatile electrically block-erasable (Flash) memory containing eight 4Kword parameter blocks and sixty-three 32K-word main blocks.
The MT28F320A18 allows soft protection for blocks, as read only, by configuring soft protection registers with dedicated command sequences. For security purposes, a 128-bit chip protection register is provided.
The embedded WORD WRITE and BLOCK ERASE functions of MT28F320A18 are fully automated by an on-chip write state machine (WSM). An on-chip status register can be used to monitor the WSM status and to determine the progress of the PROGRAM/ERASE task.
The ERASE/PROGRAM SUSPEND functionality of MT28F320A18 allows compatibility with existing EEPROM emulation software packages.
The MT28F320A18 is manufactured using 0.15m process technolog