MT28F322D18 Selling Leads, Price trend, MT28F322D18 DataSheet download, circuit diagram from SeekIC.com

Features: • Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice versa• Basic configuration:Seventy-one erasable blocks Bank a (8Mb for data storage) Bank b (24M...

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SeekIC No. : 004429689 Detail

MT28F322D18: Features: • Flexible dual-bank architecture Support for true concurrent operation with zero latency Read bank a during program bank b and vice versa Read bank a during erase bank b and vice ve...

MT28F322D18 Data Sheet

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Part Number:: MT28F322D18
Supply Ability:: 5000

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Upload time: 2024/11/26

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Product Details

Description

Features:

• Flexible dual-bank architecture
Support for true concurrent operation with zero latency
Read bank a during program bank b and vice versa
Read bank a during erase bank b and vice versa
• Basic configuration:
Seventy-one erasable blocks
Bank a (8Mb for data storage)
Bank b (24Mb for program storage)
• VCC, VCCQ, VPP voltages
1.70V (MIN), 1.90V (MAX) VCC, VCCQ (MT28F322D18 only)
1.80V VCC, VCCQ (MIN); 2.20V VCC (MAX)and 2.25V VCCQ (MAX) (MT28F322D20 only)
0.9V (TYP) VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) VPP tolerant (factory programming
compatibility)
• Random access time: 70ns/80ns @ 1.70V VCC
• Burst Mode read access (MT28F322D20)
MAX clock rate: 54 MHz (tCLK = 18.5ns)
Burst latency: 70ns @ 1.80V VCC and 54 MHz
tACLK: 17ns @ 1.80V VCC and 54 MHz
• Page Mode read access1
Eight-word page
Interpage read access: 70ns/80ns @ 1.80V
Intrapage read access: 30ns @ 1.80V
• Low power consumption (VCC = 2.20V)
Asynchronous READ < 15mA (MAX)
Standby < 50A
Automatic power saving feature (APS)
• Enhanced write and erase suspend options
ERASE-SUSPEND-to-READ within same bank
PROGRAM-SUSPEND-to-READ within same bank
ERASE-SUSPEND-to-PROGRAM within same bank
• Dual 64-bit chip protection registers for security purposes
• Cross-compatible command support
Extended command set
Common flash interface
• PROGRAM/ERASE cycle
100,000 WRITE/ERASE cycles per block

Specifications

Voltage to Any Ball Except VCC and VPP
    with Respect to VSS ........................ -0.5V to +2.45V
VPP Voltage (for BLOCK ERASE and PROGRAM
    with Respect to VSS) .................... -0.5V to +13.5V**
VCC and VCCQ Supply Voltage
    with Respect to VSS ........................ -0.3V to +2.45V
Output Short Circuit Current ................................100mA
Operating Temperature Range ................ -40 to +85
Storage Temperature Range ..................-55 to +125
Soldering Cycle ..........................................260 for 10s
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Maximum DC voltage on VPP may overshoot to +13.5V for periods < 20ns.

Description

The MT28F322D20 and MT28F322D18 are highperformance, high-density, nonvolatile Flash memory solutions that can significantly improve system performance. This new architecture features a two-memorybank configuration that supports dual-bank operation with no latency.

A high-performance bus interface of MT28F322D18 allows a fast burst or page mode data transfer; a conventional asynchronous bus interface is provided as well.

The MT28F322D18 allow soft protection for blocks, as readonly, by configuring soft protection registers with dedicated command sequences. For security purposes, two 64-bit chip protection registers are provided.

The embedded WORD WRITE and BLOCK ERASE functions of MT28F322D18 are fully automated by an on-chip write state machine (WSM). Two on-chip status registers, one for each of the two memory partitions, can be used to monitor the WSM status and to determine the progress of the program/erase task.

The erase/program suspend of MT28F322D18 functionality allows compatibility with existing EEPROM emulation software packages.

The MT28F322D18 are manufactured using 0.18m process technology.

MT28F322D18

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