MTB50P03HDL

Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 50 A
Resistance Drain-Source RDS (on) : 25 mOhms at 5 V


Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	30	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	30	Vdc
GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms)	VGS VGSM	±15 ± 20	Vdc Vpk
Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s)	ID ID IDM	50 31 150	Adc Apk
Total Power Dissipation Derate above 25 Total Power Dissipation @ TC = 25, when mounted with the minimum recommended pad size	PD	125 1.0 2.5	Watts W/ Watts
Operating and Storage Temperature Range	TJ, Tstg	55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25 Vdc, VGS = 5.0 Vdc, Peak IL = 50 Apk, L = 1.0 mH, RG = 25 )	EAS	1250	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted with the minimum recommended pad size	RJC RJA RJA	1.0 62.5 50	/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds	TL	260

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

Designer's, EFET, and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.


Description

The MTB50P03HDL has the capability of housing a larger die than any existing surface mount package which allows MTB50P03HDL to be used in applications that require the use of surface mount components with higher power and lower R_DS(on) capabilities. This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. The MTB50P03HDL also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTB50P03HDL is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Parameters:

Technical/Catalog Information	MTB50P03HDL
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	50A
Rds On (Max) @ Id, Vgs	25 mOhm @ 25A, 5V
Input Capacitance (Ciss) @ Vds	4900pF @ 25V
Power - Max	2.5W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTB50P03HDL MTB50P03HDL