Features: • Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature• Static Parameters are the Same for both TMOS V and TMOS EFET• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part NumberSpecifications ...
MTD15N06: Features: • Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature• Static Parameters are the Same for both TMOS V and TMOS EFET• Surface Mount Packag...
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Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
60 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 25 |
Vdc Vpk |
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
15 12 53 |
Adc Apk |
Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C(1) |
PD |
60 0.4 2.1 |
Watts W/°C Watts |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 175 |
°C |
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 5.0Vdc, PEAK IL =15Apk, L = 1.0mH, RG = 25) |
EAS |
113 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient(1) |
RJC RJA RJA |
1.67 100 71.4 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |