MTB8N50D

The MTB8N50D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R_DS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTB8N50D also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, the MTB8N50D is  particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.