Features: • Ultra Low RDS(on), HighCell Density, HDTMOS• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Avalanche Energy Specified• Surface Mount Package Available in 16 mm, 13inch/2500 Unit, Tape & Reel, Add...
MTD20P06: Features: • Ultra Low RDS(on), HighCell Density, HDTMOS• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Avalanche Ener...
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Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
60 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms) |
VGS VGSM |
± 15 ± 20 |
Vdc Vpk |
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
15 9.0 45 |
Adc Apk |
Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
72 0.58 1.75 |
Watts W/°C Watts |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, PEAK IL =15Apk, L = 2.7mH, RG = 25) |
EAS |
300 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient when mounted to minimum recommended pad size |
RJC RJA RJA |
1.73 100 71.4 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |