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MTB4N80E1D

Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Short ...

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MTB4N80E1D: Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterize...

MTB4N80E1D Data Sheet

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Part Number:
MTB4N80E1D
Supply Ability:
5000

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  • 15 Days
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Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
800
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
800
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp 10 s)
ID
ID
IDM
4.0
2.9
12
Adc
Apk
Total Power Dissipation
Derate above 25
Total Power Dissipation @ TA = 25, when mounted with the minimum recommended pad size
PD
125
1.0
2.5
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 25Vdc, VGS = 10 Vdc, Peak IL = 8.0Apk, L = 10mH, RG = 25 )
EAS
320
mJ
Thermal Resistance - Junction to Case
 - Junction to Ambient
 - Junction to Ambient, when mounted with the minimum recommended pad size
RJC
RJA
RJA
1.0
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.



Description

The MTB4N80E1D uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTB4N80E1D design also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTB4N80E1D is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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