MTD20N06HD

Features:

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	60	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	60	Vdc
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms)	VGS VGSM	± 20 ± 30	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	20 16 60	Adc Apk
Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C, when mounted to minimum recommended pad size	PD	40 0.32 1.75	Watts W/°C Watts
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10Vdc, PEAK IL =20Apk, L = 0.3mH, RG = 25)	EAS	60	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted to minimum recommended pad size	RJC RJA RJA	3.13 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET, Designer's and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.


Description

The MTD20N06HD is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTD20N06HD is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.