MTD1N80E

Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	800	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	800	Vdc
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s)	ID ID IDM	1.0 0.8 3.0	Adc Apk
Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size	PD	48 0.38 1.75	Watts W/°C Watts
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, PEAK IL =2.0Apk, L = 10mH, RG = 25)	EAS	20	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient ,when mounted to minimum recommended pad size	RJC RJA RJA	2.6 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	TL	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.


Description

The MTD1N80E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTD1N80E also offers a draintosource diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTD1N80E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.