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MTB9N25D

Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature• Short ...

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MTB9N25D: Features: • Robust High Voltage Termination• Avalanche Energy Specified• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterize...

MTB9N25D Data Sheet

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Part Number:
MTB9N25D
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
250
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
250
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp 10 s)
ID
ID
IDM
9.0
5.7
32
Adc
Apk
Total Power Dissipation @ 25
Derate above 25
Total Power Dissipation @ TA = 25 (1)
PD
80
0.64
2.5
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 3.0 mH, RG = 25 )
EAS
122
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient (1)
RJC
RJA
RJA
1.56
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260


(1) When surface mounted to an FR4 board using the minimum recommended pad size.

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.

EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.


Description

The MTB9N25D has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTB9N25D also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTB9N25D is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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