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MTB60N10E7

Features: New Features of TMOS 7• Ultra Low OnResistance Provides Higher Efficiency• Reduced Gate ChargeFeatures Common to TMOS 7 and TMOS EFETS• Avalanche Energy Specified• Diode Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Tempera...

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SeekIC No. : 004430496 Detail

MTB60N10E7: Features: New Features of TMOS 7• Ultra Low OnResistance Provides Higher Efficiency• Reduced Gate ChargeFeatures Common to TMOS 7 and TMOS EFETS• Avalanche Energy Specified• ...

MTB60N10E7 Data Sheet

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Part Number:
MTB60N10E7
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

New Features of TMOS 7
• Ultra Low OnResistance Provides Higher Efficiency
• Reduced Gate Charge
Features Common to TMOS 7 and TMOS EFETS
• Avalanche Energy Specified
• Diode Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Industry Standard D2PAK Surface Mount Package
• Surface Mount Package Available in 24 mm, 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number


Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
100
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10 ms)

VGS
VGSM

±20
±30


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse (tp10 s)
ID
ID
IDM
60
48
210
Adc
Total Power Dissipation
Derate above 25°C
PD
242
1.61
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 175
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 75 V, VGS = 10 Vdc,
IL = 60 A, L = 0.3 mH, RG = 25 )
EAS
540
mJ
Thermal Resistance
- Junction to Case
- JunctiontoAmbient
RJC
RJA
RJA
0.62
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
°C



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