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MTB60N05HDL

Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 50 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 50 Vdc GateSource Voltage- Continuous- NonRepetitive (tp10 ms) VGSVGSM ±15±20 VdcVpk Drain - Continuous- Continuous @ 100°C- Single ...

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MTB60N05HDL: Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 50 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 50 Vdc GateSource Voltage- Continuous- NonRepe...

MTB60N05HDL Data Sheet

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Part Number:
MTB60N05HDL
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
DrainSource Voltage
VGSS
50
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
50
Vdc
GateSource Voltage
- Continuous
- NonRepetitive (tp10 ms)

VGS
VGSM

±15
±20


Vdc
Vpk

Drain - Continuous
- Continuous @ 100°C
- Single Pulse (tp10 s)
ID
ID
IDM
60
42
180
Adc
Total Power Dissipation
Derate above 25°C
PD
150
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ,Tstg
55 to 175
°C
Single DraintoSource Avalanche
Energy - Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG =25 )
EAS
540
mJ
Thermal Resistance - Junction to Case
- JunctiontoAmbient
RJC
RJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL
260
°C



Description

The MTB60N05HDL has the capability of housing a larger die than any existing surface mount package which allows MTB60N05HDL to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced highcell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTB60N05HDL is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured - Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm 13inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number




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