Features: • Silicon Gate for Fast Switching Speeds• Low RDS(on) - 0.028 W max• Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• Specially Designed Leadframe for Maximum Power Dissipation• Available in 24 mm 13inch/800 Unit Tape ...
MTB50N06ED: Features: • Silicon Gate for Fast Switching Speeds• Low RDS(on) - 0.028 W max• Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode• Specia...
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Rating |
Symbol |
Value |
Unit |
DraintoSource Voltage |
VDSS |
60 |
Vdc |
DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GatetoSource Voltage - Continuous |
VGS |
±15 |
Vdc |
Drain Current - Continuous - Continuous @ 100 - Single Pulse (tp 10 s) |
ID ID IDM |
50 28 142 |
Adc Apk |
Total Power Dissipation Derate above 25 Total Power Dissipation @ TC = 25, when mounted with the minimum recommended pad size |
PD |
125 1.0 2.5 |
Watts W/ Watts |
Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
|
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25 (VDD = 25 Vdc, VGS = 5.0 Vpk, IL = 50 Apk, L = 0.32 mH, RG = 25 ) |
EAS |
400 |
mJ |
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient, when mounted with the minimum recommended pad size |
RJC RJA RJA |
1.0 62.5 50 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds |
TL |
260 |
The MTB50N06ED is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This Logic Level Series part is specified to operate with level logic gatetosource voltage of 5 volt and 4 volt.