MTD20N06V Selling Leads, Price trend, MTD20N06V DataSheet download, circuit diagram from SeekIC.com

Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFeatures Common to TMOS V and TMOS EFETS• Avalanche Energy Specified• IDSS and VDS(on) Spe...

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SeekIC No. : 004430548 Detail

MTD20N06V: Features: New Features of TMOS V• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology• Faster Switching than EFET PredecessorsFe...

MTD20N06V Data Sheet

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Part Number:: MTD20N06V
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/11/26

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Recent History
What is this?

MTD2001 evaluate
Features: ·Constant-current chopping function (Off time fixed, self-oscillation)·4-phase input (wi...
MTD2001-4101 evaluate
Other Power Management VCEO=60 IO=1.5 PT=5
MTD2001-4102 evaluate
Other Power Management VCEO=60 IO=1.5 PT=5

Product Details

Description

Features:

New Features of TMOS V
• Onresistance Area Product about Onehalf that of Standard MOSFETs with New Low Voltage, Low _RDS(on) Technology
• Faster Switching than EFET Predecessors
Features Common to TMOS V and TMOS EFETS
• Avalanche Energy Specified
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Static Parameters are the Same for both TMOS V and TMOS EFET
• Surface Mount Package Available in 16 mm 13inch/2500 Unit Tape & Reel,Add T4 Suffix to Part Number

Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	V_GSS	60	Vdc
DrainGate Voltage (R_GS = 1.0 M)	V_DGR	60	Vdc
GateSource Voltage - Continuous - NonRepetitive (t_p10ms)	V_GS V_GSM	±20 ±25	Vdc Vpk
Drain - Continuous - Continuous @ 100°C - Single Pulse (t_p10 s)	I_D I_D I_DM	20 13 70	Adc Apk
Total Power Dissipation Derate above 25°C Total Power Dissipation @ T_A = 25°C, when mounted to minimum recommended pad size	P_D	60 0.4 2.1	Watts W/°C Watts
Operating and Storage Temperature Range	T_J,T_stg	55 to 175	°C
Single DraintoSource Avalanche Energy - Starting T_J = 25°C (V_DD= 25 Vdc, VGS = 10 Vdc, I_L= 20 Apk, L = 1.0 mH, R_G = 25)	E_AS	200	mJ
Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient(1)	R_JC _RJAR_JA	2.5 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260	°C

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MTD20N06V

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