Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 60 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage- Continuous- NonRepetitive (tp±50ms) VGSVGSM ±15±20 VdcVpk Drain - Continuous- Continuous @ 100°C- Single ...
MTD12N06EZL: Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 60 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc GateSource Voltage- Continuous- NonRepe...
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Rating |
Symbol |
Value |
Unit |
DrainSource Voltage |
VGSS |
60 |
Vdc |
DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
GateSource Voltage - Continuous - NonRepetitive (tp±50ms) |
VGS VGSM |
±15 ±20 |
|
Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
12 7.1 36 |
Adc Apk |
Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
45 0.36 1.75 |
Watts W/°C Watts |
Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25) |
EAS |
72 |
mJ |
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient - JunctiontoAmbient(1) |
RJC RJA RJA |
2.78 100 71.4 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
This MTD12N06EZL is designed to withstand high energy in the avalanche and mode and switch efficiently. This MTD12N06EZL also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).
• ESD Protected
• 4 kV Human Body Model
• 400 V Machine Model
• Avalanche Energy Capability
• Internal SourceToDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode