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MTB55N06D

Features: • Avalanche Energy Capability Specified at Elevated Temperature• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Low Stored Gate Charge for Efficient Switching• Internal SourcetoDrain Diode Designed to Replace External Zener Transie...

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MTB55N06D: Features: • Avalanche Energy Capability Specified at Elevated Temperature• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Low Stored Gate Charge fo...

MTB55N06D Data Sheet

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Part Number:
MTB55N06D
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• ESD Protected. Designed to Typically Withstand 400 V Machine Model and 4000 V Human Body Model.


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current - Continuous
- Continuous @ 100
- Single Pulse (tp 10 s)
ID
ID
IDM
55
35.5
165
Adc
Apk
Total Power Dissipation @ 25
Derate above 25
Total Power Dissipation @ TA = 25 (1)
PD
113
0.91
2.5
Watts
W/
Watts
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25
(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25 )
EAS
454
mJ
Thermal Resistance - Junction to Case
- Junction to Ambient
- Junction to Ambient (1)
RJC
RJA
RJA
1.1
62.5
50
/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from case for 10 seconds
TL
260

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

EFET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

The MTB55N06D is designed to withstand high energy in the avalanche mode and switch efficiently. The MTB55N06D also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.




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