MTD1P50E

Features:

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode

Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	500	Vdc
DraintoGate Voltage (RGS = 1.0 M)	VDGR	500	Vdc
GatetoSource Voltage - Continuous - Single Pulse (tp 50 ms)	VGS VGSM	±20 ±40	Vdc Vpk
Drain Current - Continuous @ TC = 25°C - Continuous @ @ TC = 100°C - Single Pulse (tp 10 s)	ID ID IDM	1.0 0.8 4.0	Adc Apk
Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size	PD	50 0.4 1.75	Watts W/°C Watts
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C

Description

TheMTD1P50E is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the MTD1P50E is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.