MTD1P40E Selling Leads, Price trend, MTD1P40E DataSheet download, circuit diagram from SeekIC.com

Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 400 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 400 Vdc GateSource Voltage- Continuous- NonRepetitive (tp50s) VGSVGSM ±20±25 VdcVpk Drain - Continuous- Continuous @ 100°C- Single ...

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SeekIC No. : 004430540 Detail

MTD1P40E: Specifications Rating Symbol Value Unit DrainSource Voltage VGSS 400 Vdc DrainGate Voltage (RGS = 1.0 M) VDGR 400 Vdc GateSource Voltage- Continuous- NonRe...

MTD1P40E Data Sheet

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Part Number:: MTD1P40E
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/26

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Product Details

Description

Specifications

Rating	Symbol	Value	Unit
DrainSource Voltage	V_GSS	400	Vdc
DrainGate Voltage (R_GS = 1.0 M)	V_DGR	400	Vdc
GateSource Voltage - Continuous - NonRepetitive (t_p50s)	V_GS V_GSM	±20 ±25	Vdc Vpk
Drain - Continuous - Continuous @ 100°C - Single Pulse (t_p10 s)	I_D I_D I_DM	1.0 0.8 3.5	Adc Apk
Total Power Dissipation Derate above 25°C Total Power Dissipation @ T_A = 25°C, when mounted to minimum recommended pad size	P_D	65 0.53 1.75	Watts W/°C Watts
Operating and Storage Temperature Range	T_J,T_stg	55 to 150	°C

Description

The MTD1P40E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation mode. The new energy efficient design also offers a draintosoure diode with fast recovery time. Designed for high converters and PWM motor controls, the MTD1P40E is particularly well suited for low power flourescent lighting applications where V_DSS and R_DS(on) have been optimized for use with complimentary NChannel devices.
• Robust High Voltage Termination
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits

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