MTB3N120E

• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery time Comparable to Discrete Fast Recovery Diode
• See App. Note AN1327 Very Wide Input Voltage Range; Offline Flyback Switching Power Supply

(1) When surface mounted to an FR4 board using the minimum recommended pad size.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

The MTB3N120E has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower R_DS(on) capabilities. The MTB3N120E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. The MTB3N120E design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, the MTB3N120E is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.