About SeekIC | Services | Payment | Advertisements service | Contact Us| Justway | Links
© 2008-2012 SeekIC.com Corp.All Rights Reserved.
Suppliers
DataSheet
Response in 12 hours
Index M : M29DW128F,M295V512B70K1T,M27V400,
M29DW128F
Mfg:ST Pack:BGA Vendor:Other Category:Other
The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VCCQ is an additional vol...M295V512B70K1T
Vendor:Other Category:Other
The M295V512B70K1T is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where...M2901V
Vendor:Other Category:Other
M2901
Vendor:Other Category:Other
The M2901 is designed as one kind of voltage controlled oscillators PECL with ECLPS complementary output. It provide complementary ECL outputs through 175MHz with extremely fast rise and fall times. Each oscillator is co...M28W800T
Vendor:Other Category:Other
The M28W800T is a 8 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. The device is offered in the TSOP48 (12 x 20 mm) and the BGA48 0.75m...M28W800CT
Vendor:Other Category:Other
The M28W800CT is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low...M28W800CB
Mfg:STM Pack:TSOP D/C:N/A Vendor:Other Category:Other
The M28W800CB is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low...M28W800BT
Mfg:50 Pack:ST D/C:TSSOP Vendor:Other Category:Other
The M28W800BT is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low...M28W800BB
D/C:08+ Vendor:Other Category:Other
The M28W800BB is a 8 Mbit (512Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low...M28W800B
Vendor:Other Category:Other
The M28W800B is a 8 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. The device is offered in the TSOP48 (12 x 20 mm) and the BGA48 0.75m...M28W640FSU
Vendor:Other Category:Other
The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2....M28W640FST
Vendor:Other Category:Other
The M28W640FST and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to...M28W640FSB
Vendor:Other Category:Other
The M28W640FSB and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to...M28W640FCT
Mfg:ST Pack:TSOP Vendor:Other Category:Other
The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the ...M28W640FCB
Vendor:Other Category:Other
The M28W640FCT and M28W640FCB are 64 Mbit (4 Mbit x 16) non-volatile Flash memories that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the ...M28W640ECT85N6
Vendor:Other Category:Other
Features of the M28W640ECT85N6 are:(1)supply voltage;(2)access time is 70,85,90,100ns;(3)programming time 10s/byte;(4)common flash interface;(5)memory blocks;(6)block locking;(7)secuity;(8)automatic stan-by mode;(9)progr...M28W640ECT
Vendor:Other Category:Other
The M28W640ECT is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1...M28W640ECB
Vendor:Other Category:Other
The M28W640ECB is a 64 Mbit (4 Mbit x 16) nonvolatile Flash memory that can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1...M28W640CT
Mfg:ST D/C:01+ Vendor:Other Category:Other
The M28W640CT is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low...M28W640CB
Vendor:Other Category:Other
The M28W640CB is a 64 Mbit (4 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low...M28W640
Vendor:Other Category:Other
The M28W640 is a 64 Mbit (4 Mbit*16) non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a word-by-word basis. Features of the M28W640 are:(1)supply voltage;(2)access...M28W320FSU
Vendor:Other Category:Other
The M28W320FSU and the M28W640FSU are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2....M28W320FST
Vendor:Other Category:Other
The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to ...M28W320FSB
Vendor:Other Category:Other
The M28W320FS and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to ...M28W320ECT
Vendor:Other Category:Other
M28W320ECB
Vendor:Other Category:Other
M28W320EBT
Vendor:Other Category:Other
The M28W320EB is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...M28W320EBB
Vendor:Other Category:Other
The M28W320EB is a 32 Mbit (2 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...M28W320CT
Mfg:ST Pack:BGA Vendor:Other Category:Other
The M28W320C is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (10 x 20mm) and the mBGA47, 0....M28W320CB-90N6
Vendor:Other Category:Other
The M28W320CB-90N6 is a kind of 32 Mbit non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. The memory is organised as 2 Mbit by 16 bits. It is p...M28W320CB-90N1
Vendor:Other Category:Other
The M28W320CB-90N1 is a kind of 32 Mbit non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. The memory is organised as 2 Mbit by 16 bits. It is p...M28W320CB
Vendor:Other Category:Other
The M28W320CB is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (10 x 20mm) and the mBGA47, 0...M28W320BT
Mfg:ST Pack:BGA Vendor:Other Category:Other
Flash memory of M28W320BT that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allow...M28W160T
Vendor:Other Category:Other
The M28W160T is a 16 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (12 x 20 mm) and the BGA48 0.7...M28W160ECT
Vendor:Other Category:Other
SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed...M28W160ECB
Vendor:Other Category:Other
SUMMARY DESCRIPTION The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed...M28W160CT
Vendor:Other Category:Other
The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...M28W160CB
Mfg:ST Pack:BGA Vendor:Other Category:Other
The M28W160C is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...M28W160BT
Mfg:11000 Pack:ST Vendor:Other Category:Other
The M28W160B is a 16 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (10 x 20mm) and the BGA46, 0.7...M28W160BB
Mfg:11000 Pack:ST Vendor:Other Category:Other
The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...M28W160B
Mfg:18 Pack:ST Vendor:Other Category:Other
The M28W160 is a 16 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (12 x 20 mm) and the BGA48 0.75...M28R400CT-KGD
Vendor:Other Category:Other
The M28R400C are available as Known Good Dice.STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. ST's Known Good Die products are as reliable and of th...M28R400CT
Vendor:Other Category:Other
The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...M28R400CB-KGD
Vendor:Other Category:Other
The M28R400C are available as Known Good Dice.STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. ST's Known Good Die products are as reliable and of th...M28R400CB
Mfg:N/A Pack:BGA D/C:05+ Vendor:Other Category:Other
The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low ...M28LV64
Vendor:Other Category:Other
The M28LV64 is an 8K x 8 low power Parallel EEPROM fabricated with SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V pow...M28LV16
Vendor:Other Category:Other
The M28LV16 is a 2K x 8 low power Parallel EEPROMfabricatedwithSGS-THOMSONproprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 2.7V to 3.6V power su...M28F420
Vendor:Other Category:Other
The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and...M28F410
Vendor:Other Category:Other
The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and...M28F256
Vendor:Other Category:Other
The M28F256 is a kind of 256kbit-wide CMOS flash-memory. It offers the most cost-effective and reliable alternative for updatable non-volatile memory. Memory contents of the device can be erased and reprogrammed: 1)in a ...M28F201
Vendor:Other Category:Other
The M28F201 FLASH Memory product is a nonvolatilememories which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 256K bytes. It uses a command register architecture to select t...M28F101
Vendor:Other Category:Other
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It usesa command register architecture to select ...M28F008
Vendor:Other Category:Other
M28C64X
Vendor:Other Category:Other
The M28C64C is an 8 Kbit x8 low power Parallel EEPROMfabricated with STMicroelectronics pro- prietary single polysilicon CMOS technology.The device offersfast access timewith low powerdis- sipationandrequiresa 5Vpowersup...M28C64C
Pack:PLCC Vendor:Other Category:Other
The M28C64C is an 8 Kbit x8 low power Parallel EEPROMfabricated with STMicroelectronics pro- prietary single polysilicon CMOS technology.The device offersfast access timewith low powerdis- sipationandrequiresa 5Vpowersup...M28C64
Mfg:ST Pack:SOP Vendor:Other Category:Other
The M28C64 devices consist of 8192x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power dissipation,...M28C17B
Vendor:Other Category:Other
The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power...M28C17A
Vendor:Other Category:Other
TheM28C16Aand M28C17Aare 2Kx8lowpower ParallelEEPROMfabricatedwithSTMicroelectron- icsproprietarysinglepolysiliconCMOStechnology. Thedeviceoffersfast accesstimewith low power dissipationand requiresa 5V or3V powersupply....M28C17
Mfg:STM D/C:01+ Vendor:Other Category:Other
The M28C17 is a 2K x 8 low power Parallel EEPROM fabricated with SGS-THOMSON proprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply.Th...M28C16B
Vendor:Other Category:Other
The M28C16B and M28C17B devices consist of 2048x8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary single polysilicon CMOS technology. The devices offer fast access time, with low power...M28C16A
Mfg:OKI Pack:PLCC D/C:N/A Vendor:Other Category:Other
TheM28C16Aand M28C17Aare 2Kx8lowpower ParallelEEPROMfabricatedwithSTMicroelectron- icsproprietarysinglepolysiliconCMOStechnology. Thedeviceoffersfast accesstimewith low power dissipationand requiresa 5V or3V powersupply....M28C16-90WK1TR
Vendor:Other Category:Other
The M28C16-90WK1TR is one member of the M28C16 family which is designed as the 16 Kbit (2K x 8) parallel EEPROM that is fabricated with STMicroelect-ronics' proprietary single polysilicon CMOS technology. This device als...M28C16-15WKA6
Vendor:Other Category:Other
The M28C16-15WKA6 is one member of the M28C16 family which is designed as the 16 Kbit (2K x 8) parallel EEPROM that is fabricated with STMicroelect-ronics' proprietary single polysilicon CMOS technology. This device also...M28C16
Mfg:OKI D/C:DIP Vendor:Other Category:Other
The M28C16 is a 2K x 8 low power Parallel EEPROMfabricatedwithSGS-THOMSONproprietary single polysilicon CMOS technology. The device offers fast access time with low power dissipation and requires a 5V power supply. The c...M28946
Vendor:Other Category:Other
The M28946 includes two independent full-rate T1/E1 interfaces, capable of simultaneously carrying two separate time-synchronized pulse code modulation (PCM) data streams over a single twisted pair. Utilizing advanced 32...M2882SYGWA-S530-E2
Vendor:Other Category:Other
M2882SURWA-S530-A3
Mfg:EVERLIGHT D/C:07+ Vendor:Other Category:Other
M2881SYGWA-S530-E2
Vendor:Other Category:Other
M2881SURWA-S530-A3
Mfg:EVERLIGHT D/C:07+ Vendor:Other Category:Other
M28256
Mfg:ST Pack:SOP Vendor:Other Category:Other
The M28256and M28256-Ware 32K x8 low power ParallelEEPROMfabricatedwith STMicroelectronics proprietary double polysilicon CMOS technology.M281
Vendor:Other Category:Other
The M281 is a bi-directional, single-pole, single-throw, normally open solid-state relay in a miniature 4-pin small outline package. This device offers very low on-resistance--allowing for a high load current rating in a...M28010
Mfg:ST Pack:DIP D/C:00+ Vendor:Other Category:Other
The M28010 devices consist of 128Kx8 bits of low power, parallel EEPROM, fabricated with STMicroelectronics' proprietary double polysilicon CMOS technology. The devices offer fast access time, with low power dissipation,...M27W801
Vendor:Other Category:Other
The M27W801 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is ...M27W800
Vendor:Other Category:Other
The M27W800 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is ...M27W512-80K6TR
Vendor:Other Category:Other
Features of the M27W512-80K6TR are:(1)2.7 to 3.6V supply voltage in read operations;(2)access time is 70ns at Vcc=3.0V to 3.6V,80ns at Vcc=2.7V to 3.6V;(3)pin compatible with M27C512;(4)low power consumption;(5)programmi...M27W512-200N6E
Vendor:Other Category:Other
The M27W512-200N6E is a low voltage 512 Kbit EPROM offered in the two range UV (ultra violet erase) and OTP (one time programmable).It is ideally suited for microprocessor systems and is organized as 65536 by 8 bits. Fe...M27W512-100B6
Vendor:Other Category:Other
Features of the M27W512-100B6 are:(1)2.7 to 3.6V supply voltage in read operations;(2)access time is 70ns at Vcc=3.0V to 3.6V,80ns at Vcc=2.7V to 3.6V;(3)pin compatible with M27C512;(4)low power consumption;(5)programmin...M27W512
Vendor:Other Category:Other
The M27W512 is a low voltage 1 Mbit EPROM of-fered in two range UV (ultravioleterase) and OTP (onetimeprogrammable). It is ideally suited for mi-croprocessor systems requiring large data or pro-gram storage and is organi...M27W402
Vendor:Other Category:Other
The M27W402 is a low voltage 4 Mbit EPROM offered in the two range UV (Ultra Violet Erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is o...M27W401-80B6TR
Vendor:Other Category:Other
Features of the M27W401-80B6TR are:(1)2.7 to 3.6V low voltage in read operations;(2)access time is 70ns at Vcc=3.0V to 3.6V,80ns at Vcc=2.7V to 3.6V;(3)pin compatible with M27W401-80B6TR;(4)low power consumption;(5)progr...M27W401
Mfg:ST Pack:PLCC Vendor:Other Category:Other
The M27W401 is a low voltage 1 Mbit EPROM of-fered in two range UV (ultravioleterase) and OTP (onetimeprogrammable). It is ideally suited for mi-croprocessor systems requiring large data or pro-gram storage and is organi...M27W400
Vendor:Other Category:Other
The M27W400 is a low voltage 4 Mbit EPROM offered in the two range UV (Ultra Violet Erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is o...M27W256
Mfg:ST Vendor:Other Category:Other
The M27W256 is a low voltage 1 Mbit EPROM of-fered in two range UV (ultravioleterase) and OTP (onetimeprogrammable). It is ideally suited for mi-croprocessor systems requiring large data or pro-gram storage and is organ...M27W202
Vendor:Other Category:Other
The M27W202 is a low voltage 2 Mbit EPROM offered in the two range UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is o...M27W201-80B6TR
Vendor:Other Category:Other
Features of the M27W201-80B6TR are:(1)2.7 to 3.6V low voltage in read operations;(2)access time is 70ns at Vcc=3.0V to 3.6V,80ns at Vcc=2.7V to 3.6V;(3)pin compatible with M27W2001;(4)low power consumption;(5)programming...M27W201
Mfg:ST Pack:QFP Vendor:Other Category:Other
The M27W201 is a low voltage 1 Mbit EPROM of-fered in two range UV (ultravioleterase) and OTP (onetimeprogrammable). It is ideally suited for mi-croprocessor systems requiring large data or pro-gram storage and is organ...M27W102-80B6TR
Vendor:Other Category:Other
The M27W102-80B6TR is a low voltage 1 Mbit EPROM of fered in two range UV and OTP.The M27W102-80B6TR belongs to M27W102 series. Features of the M27W102-80B6TR are:(1)2.7V to 3.6V low voltage in read operation;(2)read ac...M27W102
Vendor:Other Category:Other
The M27W102 is a low voltage 1 Mbit EPROM of-fered in two range UV (ultravioleterase) and OTP (onetimeprogrammable). It is ideally suited for mi-croprocessor systems requiring large data or pro-gram storage and is organ...M27W101-80B6TR
Vendor:Other Category:Other
The M27W101-80B6TR is a low voltage 1 Mbit EPROM of fered in two range UV and OTP.The M27W101-80B6TR belongs to M27W101 series. Features of the M27W101-80B6TR are:(1)2.7V to 3.6V low voltage in read operation;(2)access ...M27W101
Vendor:Other Category:Other
The M27W101 is a low voltage 1 Mbit EPROM of-fered in two range UV (ultravioleterase) and OTP (onetimeprogrammable). It is ideally suited for mi-croprocessor systems requiring large data or pro-gram storage and is organ...M27W064
Mfg:ST Vendor:Other Category:Other
The M27W064 is a 64 Mbit (4Mb x16) non-volatile, One Time Programmable (OTP), FlexibleROM™ Memory. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program operations require an add...M27W032
Vendor:Other Category:Other
The M27W032 is a 32 Mbit (2Mb x16) non-volatile, One Time Programmable (OTP), FlexibleROM™ Memory. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program operations require an add...M27W016
Vendor:Other Category:Other
The M27W016 is a 16 Mbit (2Mb x16) non-volatile, One Time Programmable (OTP), FlexibleROM™ Memory. Read operations can be performed using a single low voltage (2.7 to 3.6V) supply. Program operations require an add...M27V801
Mfg:ST Vendor:Other Category:Other
The M27V801 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is ...M27V800
Vendor:Other Category:Other
The M27V800 is a low voltage 8 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is ...M27V512
Mfg:ST Vendor:Other Category:Other
The M27V512 is a low voltage 512 Kbit EPROM offered in the two ranges UV (ultra viloet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems and is organized as 65,536 by 8 bits.The M27V...M27V405
Mfg:ST Vendor:Other Category:Other
The M27V405 is a low voltage 4 Mbit EPROM offered in the OTP range (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is organised as 524,288 by 8 bits.Th...M27V402
Mfg:ST Vendor:Other Category:Other
The M27V402 is a low voltage, low power 4 Mbit UV erasable and electrically programmable EPROM, ideally suited for handheld and portable microprocessor systems requiring large programs. It is organized as 262,144 by 16 b...M27V401
Mfg:CLCC Vendor:Other Category:Other
The M27V401 is a low voltage 4 Mbit EPROM offered in the two range UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage and is o...M27V400
Mfg:ST Vendor:Other Category:Other
The M27V400 is an 4 Mbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised a...