Features: SUPPLY VOLTAGE
VDD = 2.7V to 3.6V: for Program, Erase and Read
VDDQ = 1.65V or 2.7V: Input/Output option
VPP = 12V: optional Supply Voltage for fast Program and Erase
ACCESS TIME
3.0V to 3.6V: 100ns
2.7V to 3.6V: 120ns
PROGRAMMING TIME: 10s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Word-by-Word
Status Register bits
COMMON FLASH INTERFACE
64 bit Security Code
OTP MEMORY AREA
MEMORY BLOCKS
Parameter Blocks (Top or Bottom location)
Main Blocks
BLOCK ERASE
BLOCK PROTECTION on TWO PARAMETER BLOCKS (selected without 12V supply)
PROGRAM/ERASE SUSPEND
Read or Program another Block during Program/Erase Suspend
PROGRAM/ERASE LATENCY TIME: <1s
Data update on a Word-by-Word basis
Efficient data Read/Write during Program/Erase suspend
FAST RECOVERY from POWER DOWN
LOW POWER CONSUMPTION
Automatic Stand-by: 10A max
Stand-by: 10A max
100,000 Program/Erase cycles per block
20 YEARS OF DATA RETENTION
Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
Manufacturer Code: 0020h
Device Code, M28W160T: 0090h
Device Code, M28W160B: 0091h
Specifications
|
Symbol |
Parameter |
Value |
Unit |
|
TA |
Ambient Operating Temperature (2) |
40 to 85 |
°C |
|
TBIAS |
Temperature Under Bias |
40 to 125 |
°C |
|
TSTG |
Storage Temperature |
55 to 155 |
°C |
|
VIO |
Input or Output Voltage |
0.6 to VDDQ+0.6 |
V |
|
VDD, VDDQ |
Supply Voltage |
0.6 to 4.2 |
V |
|
VPP |
Program Voltage |
0.6 to 13.5 |
V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Depends on range.
DescriptionThe M28W160 is a 16 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (12 x 20 mm) and the BGA48 0.75 mm ball pitch packages. When shipped, all bits of the M28W160 are in the '1' state.
The array matrix organisation of M28W160B allows each block to be erased and reprogrammed without affecting other blocks. Each block can be programmed and erased over 100,000 cycles. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up the program phase at customer production line environment.
An internal Command Interface (C.I.) decodes the instructions to access/modify the memory content. The Program/Erase Controller (P/E.C.) automatically executes the algorithms taking care of the timings necessary for program and erase operations. Verification is performed too, unburdening the microcontroller, while the Status Register tracks the status of the operation.
The following instructions of M28W160B are executed by the M28W160: Read Array, Read Electronic Signature, Read Status Register, Clear Status Register, Program, Block Erase, Program/Erase Suspend, Program/Erase Resume, CFI Query, Read/Program OTP Area.
M28W160B Data Sheet
