M28W160BB

Features: ` SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.6V for Input/Output VPP = 12V for fast Program (optional)` ACCESS TIME: 70, 85, 90,100ns` PROGRAMMING TIME 10s typical Double Word Programming Option` COMMON FLASH INTERFACE 64 bit Security Code` MEMORY BLOCKS Paramet...

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SeekIC No. : 004404307 Detail

M28W160BB: Features: ` SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.6V for Input/Output VPP = 12V for fast Program (optional)` ACCESS TIME: 70, 85, 90,100ns` PROGRAMMING TIME 10s typica...

floor Price/Ceiling Price

Part Number:
M28W160BB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

SUPPLY VOLTAGE
VDD = 2.7V to 3.6V Core Power Supply
VDDQ= 1.65V to 3.6V for Input/Output
VPP = 12V for fast Program (optional)
ACCESS TIME: 70, 85, 90,100ns
PROGRAMMING TIME
10s typical
Double Word Programming Option
COMMON FLASH INTERFACE
64 bit Security Code
MEMORY BLOCKS
Parameter Blocks (Top or Bottom location)
Main Blocks
BLOCK PROTECTION on TWO PARAMETER BLOCKS
WPfor Block Protection
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M28W160BT: 90h
Bottom Device Code, M28W160BB: 91h



Pinout

  Connection Diagram


Specifications

Symbol Parameter Value Unit
Min Max
TA Ambient Operating Temperature (1) -40 85 °C
TBIAS Temperature Under Bias -40 125 °C
TSTG Storage Temperature -55 155 °C
VIO Input or Output Voltage -0.6 VDDQ+0.6 v
VDD, VDDQ Supply Voltage -0.6 4.1 v
VPP Program Voltage -0.6 13 v
Note: 1. Depends on range.


Description

The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 6, Block Addresses. Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

Program and Erase commands of  M28W160BB are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

The memory is offered in TSOP48 (10 X 20mm), BGA46 (6.39 x 6.37mm, 0.75mm pitch) and TFBGA46 (6.39 x 6.37mm, 0.75mm pitch) packages and is supplied with all the bits erased (set to '1').




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