M28W160BT

The M28W160B is a 16 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (10 x 20mm) and the BGA46, 0.75mm ball pitch packages. When shipped, all bits of the M28W160B are in the '1' state.

The array matrix organisation of  M28W160B  allows each block to be erased and reprogrammed without affecting other blocks. Each block can be programmed and erased over 100,000 cycles. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up the program phase at customer production line environment. An internal Command Interface (C.I.) decodes the instructions to access/modify the memory content. The Program/Erase Controller (P/E.C.) automatically executes the algorithms taking care of the timings necessary for program and erase operations. Verification is performed too, unburdening the microcontroller, while the Status Register tracks the status of the operation.

The following instructions of  M28W160B  are executed by the M28W160B: Read Array, Read Electronic Signature, Read Status Register, Clear Status Register, Program, Double Word Program, Block Erase, Program/Erase Suspend, Program/Erase Resume and CFI Query.