Features: ` SUPPLY VOLTAGE
VDD = 2.7V to 3.6V: for Program, Erase and Read
VDDQ = 1.65V or 2.7V: Input/Output option
VPP = 12V: optional Supply Voltage for fast
` ACCESS TIME
2.7V to 3.6V: 90ns
2.7V to 3.6V: 100ns
` PROGRAMMING TIME:
10ms typical
Double Word Programming Option
` PROGRAM/ERASE CONTROLLER (P/E.C.)
` COMMON FLASH INTERFACE
` MEMORY BLOCKS
Parameter Blocks (Top or Bottom location)
Main Blocks
` BLOCK PROTECTION UNPROTECTION
All Blocks protected at Power Up
Any combination of blocks can be protected
WP for block locking
` SECURITY
64-bit user Programmable OTP cells
64-bit unique device identifier
One Parameter Block Permanently Lockable
` AUTOMATIC STAND-BY MODE
` PROGRAM and ERASE SUSPEND
` 100,000 PROGRAM/ERASE CYCLES per BLOCK
` 20 YEARS of DATA RETENTION
Defectivity below 1ppm/year
` ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M28W320CT: 88BAh
Bottom Device Code, M28W320CB: 88BBhPinout
Specifications
| Symbol |
Parameter |
Value |
Unit |
| TA |
Ambient Operating Temperature (2) |
40 to 85 |
°C |
| TBIAS |
Temperature Under Bias |
40 to 125 |
°C |
| TSTG |
Storage Temperature |
55 to 155 |
°C |
| VIO |
Input or Output Voltage |
0.6 to VDDQ+0.6 |
V |
| VDD, VDDQ |
Supply Voltage |
0.6 to 4.1 |
V |
| VPP |
Program Voltage |
0.6 to 13 |
V |
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Depends on range.
DescriptionThe M28W320CB is a 32 Mbit non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by- Word basis. The device is offered in the TSOP48 (10 x 20mm) and the mBGA47, 0.75mm ball pitch packages.
When shipped, all bits of the M28W320CB are in the 1 state. The array matrix organisation allows each block to be erased and reprogrammed without affecting other blocks. All blocks are protected against programming and erase at Power UP. Blocks can be unprotected to make changes in the application and then reprotected. A parameter block "Security Block" can be permanently protected against programming and erase in order to increase the data security. Each block can be programmed and erased over 100,000 cycles. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up the program phase at customer production line environment.
An internal Command Interface (C.I.)M28W320CB decodes the instructions to access/modify the memory content. The Program/Erase Controller (P/E.C.) automatically executes the algorithms taking care of the timings necessary for program and erase operations. Verification is performed too, unburdening the microcontroller, while the Status Register tracks the status of the operation. The following instructions are executed by the M28W320C: Read Array, Read Electronic Signature, Read Status Register, Clear Status Register, Program, Double Word Program, Block Erase, Program/Erase Suspend, Program/Erase Resume, CFI Query, Block Protect, Block Lock, Block Unprotect, Protection Program.
M28W320CB Data Sheet
