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Index M : M30220,M30218,M29W200BB,
M30220
Vendor:Other Category:Other
The M30220 group of single-chip microcomputers are built using the high-performance silicon gate CMOS rocess using a M16C/60 Series CPU core. The M30220 group has LCD controller/driver. M30220 group is ackaged in a 144-p...M30218
Vendor:Other Category:Other
The M30218 group of single-chip microcomputers are built using the high-performance silicon gate CMOS rocess using a M16C/60 Series CPU core and are packaged in a 100-pin plastic molded QFP. These ingle-chip microcompute...M30201
Vendor:Other Category:Other
The M30201 group of single-chip microcomputers are built using the high-performance silicon gate CMOS rocess using a M16C/60 Series CPU core. M30201 group is packaged in a 52-pin plastic molded SDIP, or 6-pin plastic mol...M30102
Vendor:Other Category:Other
The M16C/10 group (M30100 and M30102 groups) consist of single-chip microcomputers that use highperformancesilicon gate CMOS processes and have a on-chip M16C/60 series CPU core. The microcomputers re housed in 32-pin pl...M30100
Vendor:Other Category:Other
The M16C/10 group (M30100 and M30102 groups) consist of single-chip microcomputers that use highperformancesilicon gate CMOS processes and have a on-chip M16C/60 series CPU core. The microcomputers re housed in 32-pin pl...M3005LD
Vendor:Other Category:Other
The M3005LAB1/M3005LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected b...M3005LAB1
Mfg:ST Pack:DIP D/C:2005+ Vendor:Other Category:Other
The M3005LAB1/M3005LDtransmitter IC are designed for infrared remote control systems. It has a total of 448 commands which are divided into 7 sub-system groups with 64 commands each. The sub-system code may be selected b...M3004LD
Mfg:ST Pack:SOP Vendor:Other Category:Other
The M3004LAB1/M3004LDtransmitter IC are designed or infrared remote control systems. It has total of 448 commands which are divided into 7 ub-system groups with 64 commands each. The ub-system code may be selected by a ...M3004LAB1
Mfg:ST Pack:DIP Vendor:Other Category:Other
The M3004LAB1/M3004LDtransmitter IC are designed or infrared remote control systems. It has total of 448 commands which are divided into 7 ub-system groups with 64 commands each. The ub-system code may be selected by a ...M3
Vendor:Other Category:Other
This product is not recommened for new designs. Please refer to the M2 product series.M3 Series, 5x7 mm, HCMOS/TTL, 3.3 V Clock Oscillators - Offer HCMOS technology and an AT-strip crystal in a miniature ceramic surface ...M2V64S40DTP
Vendor:Other Category:Other
M2V64S40DTP is a 4-bank x 4,194,304-word x 4-bit, M2V64S30DTP is a 4-bank x 2,097,152-word x 8-bit, M2V64S40DTP is a 4-bank x 1,048,576-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are re...M2V64S40BTP
Mfg:MIT Pack:TSOP Vendor:Other Category:Other
The M2V64S40BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interfa...M2V64S30DTP
Mfg:MIT Pack:TSOP D/C:54 Vendor:Other Category:Other
M2V64S30DTP is a 4-bank x 4,194,304-word x 4-bit, M2V64S30DTP is a 4-bank x 2,097,152-word x 8-bit, M2V64S40DTP is a 4-bank x 1,048,576-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are re...M2V64S30BTP
Vendor:Other Category:Other
The M2V64S30BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interfa...M2V64S20DTP
Mfg:MITEL Pack:TSOP D/C:98+ Vendor:Other Category:Other
M2V64S20DTP is a 4-bank x 4,194,304-word x 4-bit, M2V64S30DTP is a 4-bank x 2,097,152-word x 8-bit, M2V64S40DTP is a 4-bank x 1,048,576-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are re...M2V64S20BTP
Vendor:Other Category:Other
The M2V64S20BTP is organized as 4-bank x 4194304-word x 4-bit, M2V64S30BTP is organized as 4-bank x 2097152-word x 8-bit, and M2V64S40BTP is organized as 4-bank x 1048576-word x 16-bit Synchronous DRAM with LVTTL interfa...M2V56S40TP-6
Mfg:6000 Pack:MITSUBISHI? D/C:00+ Vendor:Other Category:Other
M2V56S40TP-6 is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP-6 is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are refere...M2V56S40TP
Mfg:MITSUBISHI Pack:TSOP Vendor:Other Category:Other
M2V56S40TP is a 4-bank x 16777216-word x 4-bit, 2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced ...M2V56S40ATP
Vendor:Other Category:Other
M2V56S40ATP is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referen...M2V56S40AKT
Vendor:Other Category:Other
M2V56S40AKT is a 4-bank x 16777216-word x 4-bit, 2V56S30AKT is a 4-bank x 8388608-word x 8-bit, M2V56S40AKT is a 4-bank x 4194304-word x 16-bit, ynchronous DRAM, with LVTTL interface. All inputs and outputs are reference...M2V56S30TP-8
Mfg:Mitsubishi Pack:STK D/C:2003+ Vendor:Other Category:Other
M2V56S30TP-8 is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S30TP-8 is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are refere...M2V56S30TP-7
Mfg:Mitsubishi Pack:STK D/C:2003+ Vendor:Other Category:Other
M2V56S30TP-7 is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S30TP-7 is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are refere...M2V56S30TP-6
Mfg:Mitsubishi Pack:STK D/C:2003+ Vendor:Other Category:Other
M2V56S30TP-6 is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S30TP-6 is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are refere...M2V56S30TP
Vendor:Other Category:Other
M2V56S30TP is a 4-bank x 16777216-word x 4-bit, 2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S30TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced ...M2V56S30ATP
Vendor:Other Category:Other
M2V56S30ATP is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referen...M2V56S30AKT
Vendor:Other Category:Other
M2V56S30AKT is a 4-bank x 16777216-word x 4-bit, 2V56S30AKT is a 4-bank x 8388608-word x 8-bit, 2V56S40AKT is a 4-bank x 4194304-word x 16-bit, ynchronous DRAM, with LVTTL interface. All inputs and outputs are referenced...M2V56S20TP-8
Mfg:Mitsubishi Pack:STK D/C:2003+ Vendor:Other Category:Other
M2V56S20TP-8 is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenc...M2V56S20TP-7
Mfg:11000 Pack:MIT Vendor:Other Category:Other
M2V56S20TP-7 is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenc...M2V56S20TP-6
Mfg:11000 Pack:MIT Vendor:Other Category:Other
M2V56S20TP-6 is a 4-bank x 16777216-word x 4-bit, M2V56S30TP is a 4-bank x 8388608-word x 8-bit, M2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenc...M2V56S20TP
Vendor:Other Category:Other
M2V56S20TP is a 4-bank x 16777216-word x 4-bit, 2V56S30TP is a 4-bank x 8388608-word x 8-bit, 2V56S40TP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced t...M2V56S20ATP
Vendor:Other Category:Other
M2V56S20ATP is a 4-bank x 16777216-word x 4-bit, M2V56S30ATP is a 4-bank x 8388608-word x 8-bit, M2V56S40ATP is a 4-bank x 4194304-word x 16-bit, synchronous DRAM, with LVTTL interface. All inputs and outputs are referen...M2V56S20AKT
Vendor:Other Category:Other
M2V56S20AKT is a 4-bank x 16777216-word x 4-bit, 2V56S30AKT is a 4-bank x 8388608-word x 8-bit, 2V56S40AKT is a 4-bank x 4194304-word x 16-bit, ynchronous DRAM, with LVTTL interface. All inputs and outputs are referenced...M2V28S40TP
Vendor:Other Category:Other
M2V28S20TP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30TP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40TP is organized as 4-bank x 2,097,152-word x 16-...M2V28S40ATP
Mfg:MITSUBIS.. Pack:TSOP Vendor:Other Category:Other
M2V28S20ATP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30ATP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40ATP is organized as 4-bank x 2,097,152-word x ...M2V28S30TP
Vendor:Other Category:Other
M2V28S30TP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30TP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40TP is organized as 4-bank x 2,097,152-word x 16-...M2V28S30ATP
Vendor:Other Category:Other
M2V28S30ATP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30ATP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40ATP is organized as 4-bank x 2,097,152-word x ...M2V28S20TP
Vendor:Other Category:Other
M2V28S20TP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30TP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40TP is organized as 4-bank x 2,097,152-word x 16-...M2V28S20ATP
Vendor:Other Category:Other
M2V28S20ATP is organized as 4-bank x 8,388,608-word x 4-bit Synchronous DRAM with LVTTL interface and M2V28S30ATP is organized as 4-bank x 4,194,304-word x 8-bit and M2V28S40ATP is organized as 4-bank x 2,097,152-word x ...M2S56D40ATP-75L
Vendor:Other Category:Other
M2S56D40ATP-75L is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit, M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. A...M2S56D40ATP-75AL
Vendor:Other Category:Other
M2S56D40ATP-75AL is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit, M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. ...M2S56D40ATP-75
Pack:1620 D/C:07+ Vendor:Other Category:Other
M2S56D40ATP-75 is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit, M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. Al...M2S56D40ATP-10L
Vendor:Other Category:Other
M2S56D40ATP-10L is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit, M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. A...M2S56D40ATP-10
Vendor:Other Category:Other
M2S56D40ATP-10 is a 4-bank x 16777216-word x 4-bit, M2S56D30ATP / AKT is a 4-bank x 8388608-word x 8-bit, M2S56D40ATP/ AKT is a 4-bank x 4194304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. Al...M2S56D40ATP
Vendor:Other Category:Other
M2S56D40ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit, M2S56D40ATP is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All contro...M2S56D40AKT
Vendor:Other Category:Other
M2S56D40AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All contro...M2S56D30TP
Vendor:Other Category:Other
M2S56D30TP is a 4-bank x 16777216-word x 4-bit, M2S56D30TP is a 4-bank x 8388608-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge o...M2S56D30ATP
Vendor:Other Category:Other
M2S56D30ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit, M2S56D40ATP is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All contro...M2S56D30AKT
Vendor:Other Category:Other
M2S56D30AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All contro...M2S56D20TP
Vendor:Other Category:Other
M2S56D20TP is a 4-bank x 16777216-word x 4-bit, M2S56D30TP is a 4-bank x 8388608-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising edge o...M2S56D20ATP
Mfg:ELPIDA D/C:TSOP Vendor:Other Category:Other
M2S56D20ATP is a 4-bank x 16,777,216-word x 4-bit, M2S56D30ATP is a 4-bank x 8,388,608-word x 8-bit, M2S56D40ATP is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All contro...M2S56D20AKT
Vendor:Other Category:Other
M2S56D20AKT is a 4-bank x 16,777,216-word x 4-bit, M2S56D30AKT is a 4-bank x 8,388,608-word x 8-bit, M2S56D40AKT is a 4-bank x 4,194,304-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All contro...M2S28D40ATP
Vendor:Other Category:Other
M2S28D40ATP is a 4-bank x 8388608-word x 4-bit, M2S28D30ATP is a 4-bank x 4194304-word x 8-bit, M2S28D40ATP is a 4-bank x 2097152-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and a...M2S28D30ATP
Vendor:Other Category:Other
M2S28D30ATP is a 4-bank x 8388608-word x 4-bit, M2S28D30ATP is a 4-bank x 4194304-word x 8-bit, M2S28D40ATP is a 4-bank x 2097152-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and a...M2S28D20ATP
Vendor:Other Category:Other
M2S28D20ATP is a 4-bank x 8388608-word x 4-bit, M2S28D30ATP is a 4-bank x 4194304-word x 8-bit, M2S28D40ATP is a 4-bank x 2097152-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and a...M2S12D30TP
Mfg:MITSUBISHI D/C:02 Vendor:Other Category:Other
M2S12D30TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising e...M2S12D20TP
Vendor:Other Category:Other
M2S12D20TP is a 4-bank x 33,554,432-word x 4-bit, M2S12D30TP is a 4-bank x 16,777,216-word x 8-bit, double data rate synchronous DRAM, with SSTL_2 interface. All control and address signals are referenced to the rising e...M2GB51TB-1
Vendor:Other Category:Other
M29W800T90N6TR
Vendor:Other Category:Other
Features of the M29W800T90N6TR are:(1)2.7 to 3.6V supply voltage for program,erase and read operation;(2)fast access time is 90ns;(3)fast programming time 100s byte/20s by word typical;(4)program/erase controller(P/E.C.)...M29W800T
Vendor:Other Category:Other
The M29W800T is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby- Word basis using only a single 2.7V to 3.6V VCC supply. For Program and E...M29W800DT-70N6E
Vendor:Other Category:Other
The M29W800DT-70N6E is designed as one kind of 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data...M29W800DT
Mfg:ST D/C:00+ Vendor:Other Category:Other
The M29W800DT is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory def...M29W800DB-70N6E
Vendor:Other Category:Other
The M29W800DB-70N6E is designed as one kind of 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data...M29W800DB
Mfg:600 Pack:ST D/C:TSSOP Vendor:Other Category:Other
The M29W800DB is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory def...M29W800D
Vendor:Other Category:Other
Features of the M29W800D are:(1)supply voltage is Vcc=2.7 to 3.6V for program,erase and read;(2)access time is 70ns,90ns;(3)programming time 100s/byte/word typical;(4)19 memory blocks;(5)program/erase controller;(6)erase...M29W800B
Vendor:Other Category:Other
The M29W800B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby- Word basis using only a single 2.7V to 3.6V VCC supply. For Program and E...M29W800AT
Mfg:ST Pack:BGA D/C:02+ Vendor:Other Category:Other
The M29W800AT is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program ...M29W800AB
Mfg:ST Pack:TSOP D/C:453 Vendor:Other Category:Other
The M29W800AB is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program ...M29W641DU
Vendor:Other Category:Other
Stressing the M29W641DU above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliab...M29W641DL
Vendor:Other Category:Other
Stressing the M29W641DL above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliab...M29W641DH
Vendor:Other Category:Other
Stressing the M29W641DH above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliab...M29W640GT-70NA6E
Vendor:Other Category:Other
The M29W640GT-70NA6E is designed as one kind of 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data...M29W640GT70NA6E
Vendor:Numonyx/ST Micro Category:Integrated Circuits (ICs)
IC FLASH 64MB 3V 70NS TB 48TSOPThe M29W640GT70NA6E is one member of the M29W640GT series.The devices have an array of 135 blocks, divided into 8 Parameter Blocks of 8 Kbytes each (or 4 Kwords each), and 127 Main Blocks of 64 Kbytes each (or 32 Kwords ...M29W640GH
Vendor:Other Category:Other
The M29W640GH is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defa...M29W640GB70NA6E
Vendor:Other Category:Other
The M29W640GB70NA6E is designed as one kind of 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data ...M29W640FT70N6E
Vendor:Numonyx/ST Micro Category:Integrated Circuits (ICs)
IC FLSH 64MBIT 3V 70NS TB 48TSOPThe M29W640FT70N6E is designed as one kind of 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data i...M29W640FB70N6E
Vendor:Numonyx/ST Micro Category:Integrated Circuits (ICs)
IC FLSH 64MBIT 3V 70NS BB 48TSOPThe M29W640FB70N6E is designed as one kind of 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data i...M29W640DT
Mfg:STM Pack:TSOP D/C:N/A Vendor:Other Category:Other
The M29W640DT is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defa...M29W640DB
Vendor:Other Category:Other
The M29W640DB is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defa...M29W512B70K1T
Vendor:Other Category:Other
The M29W512B70K1T is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults ...M29W512B
Vendor:Other Category:Other
The M29W512B is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to it...M29W400T
Vendor:Other Category:Other
The M29W400T is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby- Wordbasis using onlya single 2.7V to 3.6VVCC supply. For Program and Era...M29W400DB70N6
Vendor:Other Category:Other
The M29W400DB70N6 is designed as one kind of 4 Mbit (512Kb x8 or 256Kb x16, boot block) 3V supply flash memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data...M29W400DB70M6T
Vendor:Other Category:Other
The M29W400DB70M6T is a 4 Mbit (512Kb x8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memo...M29W400BT
Mfg:ST Pack:TSOP Vendor:Other Category:Other
The M29W400BT is a 4 Mbit (512Kb x8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)supply. On power-up the memory def...M29W400BB70M1T
Vendor:Other Category:Other
The M29W400BB70M1T is a 4 Mbit (512Kb x8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memo...M29W400BB55M1T
Vendor:Other Category:Other
Features of the M29W400BB55M1T are:(1)single 2.7 to 3.6V supply voltage for program.erase and read operations;(2)access time is 55ns;(3)programming time is 10s per byte/word typical;(4)11 memory blocks;(5)program/erase c...M29W400BB120M6
Vendor:Other Category:Other
The M29W400B is a 4 Mbit(512Kb*8 or 256Kb*16) non-volatile memory that can be read,erased and reprogrammed.The M29W400BB120M6 belongs to M29W400B series. Features of the M29W400BB120M6 are:(1)single 2.7 to 3.6V supply v...M29W400BB
Mfg:ST Vendor:Other Category:Other
The M29W400BB is a 4 Mbit (512Kb x8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)supply. On power-up the memory def...M29W400B-90M1R
Vendor:Other Category:Other
Features of the M29W400B-90M1R are:(1)2.7 to 3.6V supply voltage for program.erase and read operations;(2)fast access time is 90ns;(3)fast programming time is 10s per byte/16s by word typical;(4)memory blocks;(5)program/...M29W400B
Vendor:Other Category:Other
The M29W400B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby- Wordbasis using onlya single 2.7V to 3.6VVCC supply. For Program and Era...M29W320ET
Vendor:Other Category:Other
The M29W320ET is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defa...M29W320EB
Pack:. Vendor:Other Category:Other
The M29W320EB is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defa...M29W320DT90N1
Vendor:Other Category:Other
The M29W320DT90N1 is designed as one kind of 32 Mbit (4Mb x8 or 2Mb x16, boot block) 3V supply flash memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data wh...M29W320DT70N6F
Vendor:Other Category:Other
The M29W320DT70N6F is a kind of 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory. It can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. The memory is d...M29W320DT70N6E
Vendor:Other Category:Other
The M29W320DT70N6E is designed as one kind of 32 Mbit (4Mb x8 or 2Mb x16, boot block) 3V supply flash memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data w...M29W320DT
Vendor:Other Category:Other
The M29W320DT is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defa...M29W320DB
Vendor:Other Category:Other
The M29W320DB is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defa...M29W200BT
Vendor:Other Category:Other
The M29W200BT is a 2 Mbit (256Kb x8 or 128Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory de...M29W200BB70N6T
Vendor:Other Category:Other
Features of the M29W200BB70N6T are:(1)single 2.7 to 3.6V supply voltage for program,erase and read operations;(2)access time is 55ns;(3)programming time;(4) 7 memory blocks;(5)program/erase controller;(6)erase suspend an...M29W200BB
Pack:TSSOP D/C:07+ Vendor:Other Category:Other
The M29W200BB is a 2 Mbit (256Kb x8 or 128Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory de...