Features: 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10ms typicalPROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy OutputSECURITY PROTECTION MEMORY AREA INSTRUCTION ADDRESS CODING:...
M29W800AT: Features: 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10ms typicalPROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word S...
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Symbol |
Parameter |
Value |
Unit |
TA |
Ambient Operating Temperature (3) |
40 to 85 |
°C |
TBIAS |
Temperature Under Bias |
50 to 125 |
°C |
TSTG |
Storage Temperature |
65 to 150 |
°C |
VIO (2) |
Input or Output Voltage |
0.6 to 5 |
V |
VCC |
Supply Voltage |
0.6 to 5 |
V |
V(A9, E,G, RP)(2) |
A9, E, G, RP Voltage |
0.6 to 13.5 |
V |
The M29W800AT is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation M29W800AT allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status M29W800AT, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The device is offered in TSOP48 (12 x 20mm), SO44 and LFBGA48 0.8 mm ball pitch packages.