PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Storage Temperature 65 to 150 °C VIO(2) Input or Output Voltage 0.6 to 5 V VCC Su...
M29W004B: PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature (3) 40 to 85 °C TBIAS Temperature Under Bias 50 to 125 °C TSTG Stora...
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Symbol |
Parameter |
Value |
Unit |
TA |
Ambient Operating Temperature (3) |
40 to 85 |
°C |
TBIAS |
Temperature Under Bias |
50 to 125 |
°C |
TSTG |
Storage Temperature |
65 to 150 |
°C |
VIO(2) |
Input or Output Voltage |
0.6 to 5 |
V |
VCC |
Supply Voltage |
0.6 to 5 |
V |
V(A9, E, G, RP)(2) |
A9, E, G, RP Voltage |
0.6 to 13.5 |
V |
The M29W004B is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.
The array matrix organisation M29W004B allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings.
The M29W004B is offered in TSOP40 (10 x 20mm) package.