M29W400B

The M29W400B is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-systemon a Byte-by-Byteor Wordby- Wordbasis using onlya single 2.7V to 3.6VV_CC supply. For Program and Erase operations the necessary high voltages are generated internally.

The M29W400B can also be programmed in standard programmers.

The array matrix organisation M29W400B allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programingand erase on programming equipment,and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.

Instructions for Read/Reset, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and ChipErase, Erase Suspend and Resume are written to the device in cyclesof commandsto a CommandInterfaceusing standard microprocessor write timings.

The M29W400B is offered in TSOP48 (12 x 20mm), SO44 and FBGA48 (8 x 6 balls, 0.8mm pitch) packages. Both normal and reverse pinouts are available for the TSOP48 package.