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M29W800AB

Features: 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10ms typicalPROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy OutputSECURITY PROTECTION MEMORY AREA INSTRUCTION ADDRESS CODING:...

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SeekIC No. : 004404464 Detail

M29W800AB: Features: 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 80ns PROGRAMMING TIME: 10ms typicalPROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word S...

M29W800AB Data Sheet

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Part Number:
M29W800AB
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 80ns
PROGRAMMING TIME: 10ms typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy Output
SECURITY PROTECTION MEMORY AREA
INSTRUCTION ADDRESS CODING: 3 digits
MEMORY BLOCKS
Boot Block (Top or Bottom location)
Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
Read and Program another Block during Erase Suspend
LOW POWER CONSUMPTION
Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per BLOCK
20 YEARS DATA RETENTION
Defectivity below 1ppm/year
 ELECTRONIC SIGNATURE
Manufacturer Code: 20h
Top Device Code, M29W800AT: D7h
Bottom Device Code, M29W800AB: 5Bh


Pinout

Connection Diagram


Specifications

Symbol
 Parameter
Value
Unit
TA
 Ambient Operating Temperature (3)
40 to 85
°C
TBIAS
 Temperature Under Bias
50 to 125
°C
TSTG
 Storage Temperature
65 to 150
°C
VIO (2)
 Input or Output Voltage
0.6 to 5
V
VCC
 Supply Voltage
0.6 to 5
V
V(A9, E,G, RP)(2)
 A9, E, G, RP Voltage
0.6 to 13.5
V
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns during transitions.
3. Depends on range.


Description

The M29W800AB is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation M29W800AB allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment, and temporarily unprotected to make changes in the application. Each block can be programmed and erased over 100,000 cycles.

Instructions for Read/Reset M29W800AB, Auto Select for reading the Electronic Signature or Block Protection status, Programming, Block and Chip Erase, Erase Suspend and Resume are written to the device in cycles of commands to a Command Interface using standard microprocessor write timings. The device is offered in TSOP48 (12 x 20mm), SO44 and LFBGA48 0.8 mm ball pitch packages.




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