M29W320DT70N6F

Access Time :
Timing Type :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Operating Temperature : + 85 C
Memory Type : NOR Flash
Architecture : Sectored
Packaging : Reel
Interface Type : Parallel
Memory Size : 32 Mbit
Maximum Operating Current : 10 mA
Package / Case : TSOP
Data Bus Width : 8 bit, 16 bit


Pinout




Description

The M29W320DT70N6F is a kind of 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory. It can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. It is available in TSOP48 (12 x 20mm) package.

There are some features M29W320DT70N6F as follows: (1)Supply Voltage: VCC = 2.7V to 3.6V for Program, Erase and Read; VPP =12V for Fast Program (optional); (2)Access time: 70, 90ns; (3)Programming time: 10s per Byte/Word typical; (4)67 memory blocks: 1 Boot Block (Top or Bottom Location); 2 Parameter and 64 Main Blocks; (5)Program/Erase controller: Embedded Byte/Word Program algorithms; (6)Erase Suspend and Resume modes: Read and Program another Block during Erase Suspend; (7)Unlock Bypass Program command: Faster Production/Batch Programming; (8)VPP/WP pin for Fast Program and Write Protect; (9)Temporary Block Unprotection mode; (10)Common Flash Interface: 64 bit Security code; (11)Low power consumption: Standby and Automatic Standby; (12)100,000 Program/Erase cycles per block.

Then is about the absolute maximum ratings M29W320DT70N6F: (1)TBIAS, Temperature Under Bias: 50 to 125 ; (2)TSTG, Storage Temperature: 65 to 150 ; (3)VIO, Input or Output Voltage: 0.6 VCC +0.6 V; (4)VCC, Supply Voltage: 0.6 to 4 V; (5)VID, Identification Voltage: 0.6 to 13.5 V; (6)VPP, program voltage: -0.6 to 13.5 V.