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M29W800T

Features: `M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB`2.7V to 3.6V SUPPLY VOLTAGEfor PROGRAM, ERASE and READ OPERATIONS`FASTACCESS TIME: 90ns`FASTPROGRAMMING TIME 10s by Byte / 20s by Word typical`PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-...

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SeekIC No. : 004404472 Detail

M29W800T: Features: `M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB`2.7V to 3.6V SUPPLY VOLTAGEfor PROGRAM, ERASE and READ OPERATIONS`FASTACCESS TIME: 90ns`FASTPROGRAMMING TIME...

M29W800T Data Sheet

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Part Number:
M29W800T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`M29W800T and M29W800B are replaced respectively by the M29W800AT and M29W800AB
`2.7V to 3.6V SUPPLY VOLTAGEfor PROGRAM, ERASE and READ OPERATIONS
`FASTACCESS TIME: 90ns
`FASTPROGRAMMING TIME
   10s by Byte / 20s by Word typical
`PROGRAM/ERASE CONTROLLER (P/E.C.)
   Program Byte-by-Byte or Word-by-Word
   Status Register bits and Ready/Busy Output
`MEMORY BLOCKS
   Boot Block (Top or Bottom location)
   Parameter and Main blocks
`BLOCK, MULTI-BLOCK and CHIP ERASE
`MULTI BLOCK PROTECTION/TEMPORARY UNPROTECTION MODES
`ERASE SUSPEND and RESUME MODES
   Read and Program another Block during Erase Suspend
`LOW POWER CONSUMPTION
   Stand-byand AutomaticStand-by
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`20 YEARSDATARETENTION
   Defectivity below 1ppm/year
`ELECTRONIC SIGNATURE
   Manufacturer Code: 0020h
   Device Code, M29W800T: 00D7h
   Device Code, M29W800B: 005Bh


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
TA
 Ambient Operating Temperature(3)
40 to 85
TBIAS
 Temperature Under Bias
50 to 125
TSTG
 Storage Temperature
65 to 150
VIO(2)
 Input or Output Voltage (1)
0.6 to 5
V
VCC
 Supply Voltage
0.6 to 5
V
V(A9, E, G, RP)(2)
 A9, E, G, RP Voltage
0.6 to 13.5
V
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in 
               the Table "AbsoluteMaximum Ratings" may cause permanent damage to the device. 
               These are stress ratings only and operation of the device at these or any other conditions
               above those indicated in the Operating sections of this specification is not i mplied. Exposure
               to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer
               also to the STMicroelectronics SURE Program and other relevant quality documents.
           2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
           3. Depends on range.


Description

The M29W800T is a non-volatile memory that may be erased electrically at the block or chip level and programmedin-system ona Byte-by-ByteorWordby- Word basis using only a single 2.7V to 3.6V VCC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can also be programmed in standard programmers.

The array matrix organisation M29W800T allows each block to be erased and reprogrammed without affecting other blocks. Blocks can be protected against programing and erase on programming equipment,




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