M29W640GH

The M29W640GH is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The memory M29W640GH is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

The M29W640GH and M29W640GL memory array is organized into 128 uniform Blocks of 64 Kbytes each (or 32 Kwords each).

The M29W640GH and M29W640GB feature an asymmetric block architecture. The devices have an array of 135 blocks, divided into 8 Parameter Blocks of 8 Kbytes each (or 4 Kwords each), and 127 Main Blocks of 64 Kbytes each (or 32 Kwords each). The M29W640GT has the Parameter Blocks at the top of the memory address space while the M29W640GB locates the Parameter Blocks starting from the bottom.

Blocks M29W640GH are protected by groups to prevent accidental Program or Erase commands from modifying the memory.