M29W400DB70M6T

Features:

SUPPLY VOLTAGE
   V_CC = 2.7V to 3.6V for Program, Erase and Read
ACCESS TIME: 45, 55, 70ns
PROGRAMMING TIME
   10µs per Byte/Word typical
11 MEMORY BLOCKS
   1 Boot Block (Top or Bottom Location)
   2 Parameter and 8 Main Blocks
PROGRAM/ERASE CONTROLLER
   Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
   Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
   Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
LOW POWER CONSUMPTION
   Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
   Manufacturer Code: 0020h
   Top Device Code M29W400DT: 00EEh
   Bottom Device Code M29W400DB: 00EFh


Pinout




Specifications

Symbol	Parameter	Min	Max	Unit
TBIAS	Temperature Under Bias	50	125	°C
TSTG	Storage Temperature	65	150	°C
VIO	Input or Output Voltage (1,2)	0.6	VCC +0.6	V
VCC	Supply Voltage	0.6	4	V
VID	Identification Voltage	0.6	13.5	V

Description

The M29W400DB70M6T is a 4 Mbit (512Kb x8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory M29W400DB70M6T is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.