M29W640GT70NA6E

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Packaging : Tray


Description

The M29W640GT70NA6E is one member of the M29W640GT series.The devices have an array of 135 blocks, divided into 8 Parameter Blocks of 8 Kbytes each (or 4 Kwords each), and 127 Main Blocks of 64 Kbytes each (or 32 Kwords each). The M29W640GT has the Parameter Blocks at the top of the memory address space.The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible.Do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing.

Features of the M29W640GT70NA6E are:(1)read from any block during program suspend; (2)read and program another block during erase suspend; (3)low power consumption:standby and ; (4)automatic standby; (5)unlock bypass program command:faster production/batch programming; (6)common flash interface: 64-bit security code; (7)temporary block unprotection mode; (8)100,000 program/erase cycles per block.

The absolute maximum ratings of the M29W640GT70NA6E can be summarized as:(1)temperature under bias:-50 to 125;(2)storage temperature:-65 to 150;(3)input or output voltage:-0.6 to Vcc+0.6V;(4)supply voltage:-0.6 to 4V;(5)identification voltage:-0.6 to 13.5V;(6)program voltage:-0.6 to 13.5V.Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Refer also to the Numonyx SURE Program and other relevant quality documents.The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system M29W640GT70NA6E can interface easily with the device, enabling the software to upgrade itself when necessary.

Parameters:

Technical/Catalog Information	M29W640GT70NA6E
Vendor	Numonyx/ST Micro
Category	Integrated Circuits (ICs)
Memory Type	FLASH - Nor
Memory Size	64M (8Mx8, 4Mx16)
Speed	70nS
Interface	Parallel
Package / Case	48-TSOP
Packaging	Tray
Voltage - Supply	2.7 V ~ 3.6 V
Operating Temperature	-40°C ~ 85°C
Format - Memory	FLASH
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	M29W640GT70NA6E M29W640GT70NA6E