M29W640FB70N6E

Flash 64 Mbit Boot Block 3V STD Flash

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SeekIC No. : 00466968 Detail

M29W640FB70N6E: Flash 64 Mbit Boot Block 3V STD Flash

floor Price/Ceiling Price

Part Number:
M29W640FB70N6E
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Data Bus Width : 8 bit, 16 bit Memory Type : NOR Flash
Memory Size : 64 Mbit Architecture : Sectored
Interface Type : Parallel Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V Maximum Operating Current : 10 mA
Operating Temperature : + 85 C Mounting Style : SMD/SMT
Package / Case : TSOP-1-48 Packaging : Tray    

Description

Access Time :
Timing Type :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Packaging : Tray
Operating Temperature : + 85 C
Memory Type : NOR Flash
Architecture : Sectored
Memory Size : 64 Mbit
Interface Type : Parallel
Maximum Operating Current : 10 mA
Data Bus Width : 8 bit, 16 bit
Package / Case : TSOP-1-48


Pinout

  Connection Diagram


Description

The M29W640FB70N6E is designed as one kind of 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data is erased. Also this device is available in TSOP48 (12x 20 mm), TSOP56 (14 x 20 mm), TFBGA48 (6 x 8 mm, 0.8 mm pitch), and TBGA64 (10 x 13 mm, 1 mm pitch) packages.

Features of the M29W640FB70N6E are:(1)100,000 Program/Erase cycles per block;(2)Temporary Block Unprotection mode;(3)VPP/WP pin for Fast Program and Write Protect;(4)Common Flash Interface: 64-bit Security Code;(5)Unlock Bypass Program command - Faster Production/Batch Programming;(6)Low power consumption:Standby and Automatic Standby;(7)Program/Erase controller - Embedded byte/word program algorithms;(8)Programming time is 10 s per byte/word typical and Chip Program time: 10 s (4-word Program).

The absolute maximum ratings of the M29W640FB70N6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to VCC+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W640FB70N6E , please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog InformationM29W640FB70N6E
VendorNumonyx/ST Micro
CategoryIntegrated Circuits (ICs)
Memory TypeFLASH - Nor
Memory Size64M (8Mx8, 4Mx16)
Speed70ns
InterfaceParallel
Package / Case48-TSOP
PackagingTray
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Format - MemoryFLASH
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names M29W640FB70N6E
M29W640FB70N6E



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