M29W800DT

Features:

SUPPLY VOLTAGE
   V_CC = 2.7V to 3.6V for Program, Erase and Read
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
  10µs per Byte/Word typical
19 MEMORY BLOCKS
  1 Boot Block (Top or Bottom Location)
  2 Parameter and 16 Main Blocks
PROGRAM/ERASE CONTROLLER
  Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
  Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
  Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
  64 bit Security Code
LOW POWER CONSUMPTION
  Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
  Manufacturer Code: 0020h
  Top Device Code M29W800DT: 22D7h
  Bottom Device Code M29W800DB: 225Bh 


Pinout




Specifications

Symbol	Parameter	Min	Max	Unit
TBIAS	Temperature Under Bias	50	125	°C
TSTG	Storage Temperature	65	150	°C
VIO	Input or Output Voltage (1,2)	0.6	VCC +0.6	V
VCC	Supply Voltage	0.6	4	V
VID	Identification Voltage	0.6	13.5	V

Description

The M29W800DT is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

The memory  M29W800DT is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.