M29W400DB70N6

Timing Type :
Access Time : 70 ns
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Packaging : Tray
Operating Temperature : + 85 C
Interface Type : CFI
Memory Type : NOR Flash
Architecture : Sectored
Memory Size : 4 Mbit
Maximum Operating Current : 10 mA
Data Bus Width : 8 bit, 16 bit
Package / Case : TSOP-1-48


Specifications




Description

The M29W400DB70N6 is designed as one kind of 4 Mbit (512Kb x8 or 256Kb x16, boot block) 3V supply flash memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data is erased. Also this device is available in SO44, TSOP48 (12 x 20mm), TFBGA48 0.8mm pitch (6 x 9mm and 6 x 8mm) packages. The command set required to control the memory is consistent with JEDEC standards.

Features of the M29W400DB70N6 are:(1)100,000 Program/Erase cycles per block;(2)Temporary Block Unprotection mode;(3)VPP/WP pin for Fast Program and Write Protect;(4)access time: 45, 55, 70 ns;(5)Unlock Bypass Program command - Faster Production/Batch Programming;(6)Low power consumption: Standby and Automatic Standby;(7)Program/Erase controller - Embedded byte/word program algorithms;(8)Programming time is 10 s per byte/word typical and Chip Program time: 10 s (4-word Program).

The absolute maximum ratings of the M29W400DB70N6 can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to VCC+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W400DB70N6, please download the datasheet in www.seekic.com or www.chinaicmart.com.