M29W512B70K1T

Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature	0 to 70	°C
TBIAS	Temperature Under Bias	50 to 125	°C
TSTG	Storage Temperature	65 to 150	°C
VIO (2)	Input or Output Voltage	0.6 to 6	V
VCC	Supply Voltage	0.6 to 6	V
VID	Identification Voltage	0.6 to 13.5	V

Description

The M29W512B70K1T is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

Program and Erase commands M29W512B70K1T are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.