M29W320EB

Features:

SUPPLY VOLTAGE
  VCC = 2.7V to 3.6V for Program, Erase and Read
  VPP =12V for Fast Program (optional)
ACCESS TIMES: 70, 90ns
PROGRAMMING TIME
  10µs per Byte/Word typical
  Double Word/ Quadruple Byte Program
MEMORY BLOCKS
  Memory Array: 63 Main Blocks
  8 Parameter Blocks (Top or Bottom Location)
ERASE SUSPEND and RESUME MODES
  Read and Program another Block during Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
  Faster Production/Batch Programming
VPP/WP PIN for FAST PROGRAM and WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION MODE
COMMON FLASH INTERFACE
  64 bit Security Code
EXTENDED MEMORY BLOCK
  Extra block used as security block or to store additional information
LOW POWER CONSUMPTION
  Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
  Manufacturer Code: 0020h
  Top Device Code M29W320ET: 2256h
  Bottom Device Code M29W320EB: 2257h


Pinout




Specifications

Symbol	Parameter	Min	Max	Unit
TBIAS	Temperature Under Bias	50	125	°C
TSTG	Storage Temperature	65	150	°C
TLEAD	Lead Temperature during Soldering(1)		260(2)	°C
VIO	Input or Output Voltage (3,4)	0.6	VCC +0.6	V
VCC	Supply Voltage	0.6	4	V
VID	Identification Voltage	0.6	13.5	V
VPP(5)	Program Voltage	0.6	13.5	V

Description

The M29W320EB is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.

The device features an asymmetrical block architecture. The M29W320E has an array of 8 parameter and 63 main blocks. M29W320ET locates the Parameter Blocks at the top of the memory address space while the M29W320EB locates the Parameter Blocks starting from the bottom.