M29W640GB70NA6E

Access Time :
Timing Type :
Supply Voltage - Max : 3.6 V
Supply Voltage - Min : 2.7 V
Mounting Style : SMD/SMT
Packaging : Tray
Operating Temperature : + 85 C
Memory Type : NOR Flash
Architecture : Sectored
Memory Size : 64 Mbit
Interface Type : Parallel
Maximum Operating Current : 10 mA
Package / Case : TSOP
Data Bus Width : 8 bit, 16 bit


Specifications




Description

The M29W640GB70NA6E is designed as one kind of 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory device that is divided into blocks that can be erased independently, so it is possible to preserve valid data while old data is erased. Also this device is available in TSOP48 (12x 20 mm), TSOP56 (14 x 20 mm), TFBGA48 (6 x 8 mm, 0.8 mm pitch), and TBGA64 (10 x 13 mm, 1 mm pitch) packages.

Features of the M29W640GB70NA6E are:(1)100,000 Program/Erase cycles per block;(2)Temporary Block Unprotection mode;(3)VPP/WP pin for Fast Program and Write Protect;(4)Common Flash Interface: 64-bit Security Code;(5)Unlock Bypass Program command - Faster Production/Batch Programming;(6)Low power consumption:Standby and Automatic Standby;(7)Program/Erase controller - Embedded byte/word program algorithms;(8)Programming time is 10 s per byte/word typical and Chip Program time: 10 s (4-word Program).

The absolute maximum ratings of the M29W640GB70NA6E can be summarized as:(1)Temperature Under Bias: -50 to 125 °C;(2)Storage Temperature: -65 to 150 °C;(3)Input or Output Voltage: -0.6 to VCC+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5 V. If you want to know more information such as the electrical characteristics about the M29W640GB70NA6E, please download the datasheet in www.seekic.com or www.chinaicmart.com.