M29W400BB

Pinout




Specifications

Symbol	Parameter	Value	Unit
TA	Ambient Operating Temperature (Temperature Range Option 1)	0 to 70	°C
	Ambient Operating Temperature (Temperature Range Option 6)	40 to 85	°C
TBIAS	Temperature Under Bias	50 to 125	°C
TSTG	Storage Temperature	65 to 150	°C
VIO (2)	Input or Output Voltage	0.6 to 4	V
VCC	Supply Voltage	0.6 to 4	V
VID	Identification Voltage	0.6 to 13.5	V

Description

The M29W400BB is a 4 Mbit (512Kb x8 or 256Kbx16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V)supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W400B is fully backward compatible with the M29W400.

The memory M29W400BB is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set M29W400BB required to control the memory is consistent with JEDEC standards.