Features: `DUAL x8 and x16 ORGANIZATION`SMALL SIZE PLASTIC PACKAGESTSOP56 and SO44`MEMORY ERASE in BLOCKS One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection Two 8K Byte or 4K Word Key Parameter Blocks One 96K Byte or 48K Word Main Block Three 1...
M28F410: Features: `DUAL x8 and x16 ORGANIZATION`SMALL SIZE PLASTIC PACKAGESTSOP56 and SO44`MEMORY ERASE in BLOCKS One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase p...
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Symbol |
Parameter |
Value |
Unit |
TA |
Ambient Operating Temperature grade 1 grade 3 grade 6 |
0 to 70 40 to 125 40 to 85 |
|
TBIAS |
Temperature Under Bias |
50 to 125 |
|
TSTG |
Storage Temperature |
65 to 150 |
|
VIO(2,3) |
Input or Output Voltage |
0.6 to 7 |
V |
VCC |
Supply Voltage |
0.6 to 7 |
V |
VA9(2) |
A9 Voltage |
0.6 to 13.5 |
V |
VPP(2) |
Program Supply Voltage, during Erase or Programming |
0.6 to 14 |
V |
VPP(2) |
RP Voltage |
0.6 to 13.5 |
V |
Notes: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "
Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings
only and operation of the device at these or any other conditions above those indicated in the
Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions
for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. Minimum Voltage may undershoot to 2V during transition and for less than 20ns.
3. Maximum DC voltage on I/O is VCC + 0.5V, overshoot to 7V allowed for less than 20ns.
The M28F410 and M28F420 FLASH MEMORIES are non-volatile memories that may be erased electrically at the block level and programmed by byte or word. The interface is directly compatible with most microprocessors. SO44 and TSOP56 packages are used.