M28F101

PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature 40 to 125 °C TBIAS Temperature Under Bias 65 to 165 °C TSTG Storage Temperature 65 to 150 °C VIO Input or Output Voltages 0.6 to 7 V VCC Supply...

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M28F101 Picture
SeekIC No. : 004404295 Detail

M28F101: PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature 40 to 125 °C TBIAS Temperature Under Bias 65 to 165 °C TSTG Storage ...

floor Price/Ceiling Price

Part Number:
M28F101
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
40 to 125
°C
TBIAS
Temperature Under Bias
65 to 165
°C
TSTG
Storage Temperature
65 to 150
°C
VIO
Input or Output Voltages
0.6 to 7
V
VCC
Supply Voltage
0.6 to 7
V
VA9
A9 Voltage
0.6 to 13.5
V
VPP
Program Supply Voltage, during Erase
or Programming
0.6 to 14
V



Description

The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It usesa command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.




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