PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature 40 to 125 °C TBIAS Temperature Under Bias 65 to 165 °C TSTG Storage Temperature 65 to 150 °C VIO Input or Output Voltages 0.6 to 7 V VCC Supply...
M28F101: PinoutSpecifications Symbol Parameter Value Unit TA Ambient Operating Temperature 40 to 125 °C TBIAS Temperature Under Bias 65 to 165 °C TSTG Storage ...
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Symbol |
Parameter |
Value |
Unit |
TA |
Ambient Operating Temperature |
40 to 125 |
°C |
TBIAS |
Temperature Under Bias |
65 to 165 |
°C |
TSTG |
Storage Temperature |
65 to 150 |
°C |
VIO |
Input or Output Voltages |
0.6 to 7 |
V |
VCC |
Supply Voltage |
0.6 to 7 |
V |
VA9 |
A9 Voltage |
0.6 to 13.5 |
V |
VPP |
Program Supply Voltage, during Erase or Programming |
0.6 to 14 |
V |
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 128K bytes of 8 bits. It usesa command register architecture to select the operating modes and thus provides a simple microprocessor interface. The M28F101 FLASH Memory is suitable for applications where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems.