DescriptionThe M28W640 is a 64 Mbit (4 Mbit*16) non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a word-by-word basis. Features of the M28W640 are:(1)supply voltage;(2)access time is 3.0V to 3.6V:80ns,2.7V to 3.6V:90ns;(3)programming time 10...
M28W640: DescriptionThe M28W640 is a 64 Mbit (4 Mbit*16) non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a word-by-word basis. Features of the M28W64...
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The M28W640 is a 64 Mbit (4 Mbit*16) non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a word-by-word basis.
Features of the M28W640 are:(1)supply voltage;(2)access time is 3.0V to 3.6V:80ns,2.7V to 3.6V:90ns;(3)programming time 10s/byte,double word programming option,quadruple word programming option;(4)common flash interface;(5)memory blocks;(6)block locking;(7)secuity;(8)automatic stan-by mode;(9)program and erase suspend;(11)100,000 program/erase cycles per block;(12)electronic signature.
The absolute maximum ratings of the M28W640 can be summarized as:(1):the symbol is TA,the parameter is ambient operating temperature,the rating is -40 to 85,the unit is ;(2):the symbol is TBIAS,the parameter is temperature under bias,the rating is -40 to 125,the unit is ;(3):the symbol is TSTG,the parameter is storage temperature ,the rating is -55 to 155,the unit is ;(4):the symbol is VIO,the parameter is input or output voltage,the rating is -0.6 to VDDQ+0.6,the unit is V;(5):the symbol is VDD,VDDQ,the parameter M28W640 is supply voltage,the rating is -0.6 to 4.1,the unit is V;(6):the symbol is Vpp,the parameter is program supply voltage,the rating is -0.6 to 13,the unit is V.