M29DW128F

Features:

`Supply Voltage
           V<sub>CC</sub> = 2.7V to 3.6V for Program, Erase and Read
           V<sub>CCQ</sub>= 1.65V to 3.6V for Input/Output
           V<sub>PP</sub> =12V for Fast Program (optional)
`ASYNCHRONOUS RANDOM/PAGE READ
           Page Width: 8 Words
           Page Access: 25, 30ns
           Random Access: 60, 70ns
`PROGRAMMING TIME
           10µs per Byte/Word typical
           4 Words / 8 Bytes Program
           32-Word Write Buffer
`ERASE VERIFY
`MEMORY BLOCKS
           Quadruple Bank Memory Array: 16Mbit+48Mbit+48Mbit+16Mbit
           Parameter Blocks (at Top and Bottom)
`DUAL OPERATIONS
           While Program or Erase in one bank, Read in any of the other banks
`PROGRAM/ ERASE SUSPEND and RESUME MODES
           Read from any Block during Program Suspend
           Read and Program another Block during Erase Suspend
`UNLOCK BYPASS PROGRAM
           Faster Production/Batch Programming
`COMMON FLASH INTERFACE
           64 bit Security Code
`100,000 PROGRAM/ERASE CYCLES per BLOCK
`LOW POWER CONSUMPTION
           Standby and Automatic Standby
`HARDWARE BLOCK PROTECTION
           VPP/WP Pin for fast program and write protect of the four outermost parameter blocks
`SECURITY FEATURES
           Standard Protection
           Password Protection
`EXTENDED MEMORY BLOCK
           Extra block used as security block or to store additional information
`ELECTRONIC SIGNATURE
           Manufacturer Code: 0020h
           Device Code: 227Eh + 2220h + 2200h
`ECOPACK® PACKAGES AVAILABLE


Pinout




Specifications

Symbol	Parameter	Min	Max	Unit
TBIAS	Temperature Under Bias	50	125
TSTG	Storage Temperature	65	150
VIO	Input or Output Voltage(1)(2)	0.6	VCC +0.6	V
VCC	Supply Voltage	0.6	4	V
VCCQ	Input/Output Supply Voltage	0.6	4	V
VID	Identification Voltage	0.6	13.5	V
VPP(3)	Program Voltage	0.6	13.5	V

Description

The M29DW128F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VCCQ is an additional voltage supply that allows to drive the I/O pins down to 1.65V. At Power-up the memory defaults to its Read mode.

The M29DW128F features an asymmetrical block architecture, with 16 parameter and 254 main blocks, divided into four Banks, A, B, C and D, providing multiple Bank operations. While programming or erasing in one bank, read operations are possible in any other bank. The bank architecture is summarized in Table 2. Eight of the Parameter Blocks are at the top of the memory address space, and eight are at the bottom.

Program and Erase commands M29DW128F are written to the Command Interface of the memory. An onchip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory M29DW128F is consistent with JEDEC standards. The Chip Enable, Output Enable and Write Enable signals control the bus operations of the memory. They allow simple connection to most microprocessors, often without additional logic. The device supports Asynchronous Random Read and Page Read from all blocks of the memory array.

The M29DW128F has one extra 256 Byte block (Extended Block) that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone.