M28W640FSB

Features: SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.6V for Input/Output VPP = 12V for fast Program (optional) ACCESS TIME: 70ns PROGRAMMING TIME: 10s typical Double Word Programming Option Quadruple Word Programming Option COMMON FLASH INTERFACE MEMORY BLOCKS Par...

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SeekIC No. : 004404334 Detail

M28W640FSB: Features: SUPPLY VOLTAGE VDD = 2.7V to 3.6V Core Power Supply VDDQ= 1.65V to 3.6V for Input/Output VPP = 12V for fast Program (optional) ACCESS TIME: 70ns PROGRAMMING TIME: 10s typical Double ...

floor Price/Ceiling Price

Part Number:
M28W640FSB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Description



Features:

SUPPLY VOLTAGE
    VDD = 2.7V to 3.6V Core Power Supply
    VDDQ= 1.65V to 3.6V for Input/Output
    VPP = 12V for fast Program (optional)
ACCESS TIME: 70ns
PROGRAMMING TIME:
    10s typical
    Double Word Programming Option
    Quadruple Word Programming Option
COMMON FLASH INTERFACE
MEMORY BLOCKS
    Parameter Blocks (Top or Bottom location)
    Main Blocks
HARDWARE PROTECTION
    VPP Pin for write protect of all blocks
SECURITY FEATURES
    128 bit User-programmable OTP segment
    64 bit Unique Device Identifier
    KRYPTO Features: Modify Protection, Read Protection, Device Authentication
AUTOMATIC STAND-BY MODE
PROGRAM and ERASE SUSPEND
100,000 PROGRAM/ERASE CYCLES per BLOCK
ELECTRONIC SIGNATURE
    Manufacturer Code: 20h
    Device Codes: M28W320FST: 880Ah, M28W320FSB: 880Bh M28W640FST: 8858h, M28W640FSB: 8859h
ECOPACK® PACKAGE AVAILABLE



Pinout

  Connection Diagram




Specifications

Symbol
Parameter
Value
Unit
Min
Max
TA
Ambient Operating Temperature (1)
40
85
°C
TBIAS
Temperature Under Bias
40
125
°C
TSTG
Storage Temperature
55
155
°C
VIO
Input or Output Voltage
0.6
VDDQ +0.6
V
VDD,VDDF
Supply Voltage
0.6
4.1
V
VPP
Program Voltage
0.6
13
V



Description

The M28W640FSB and M28W640FS are 32 Mbit (2Mbit x 16) and 64 Mbit (4Mbit x 16) Secure Flash memories. The devices can be erased electrically at block level and programmed in-system on a Word-by-Word basis using a 2.7V to 3.6V VDD supply for the circuitry and a 1.65V to 3.6V VDDQ supply for the Input/Output pins. An optional 12V VPP power supply is provided to speed up customer programming.

The M28W640FSB and M28W640FS feature 32Mbit and 64 Mbits respectively and have an asymmetrical block architecture with 4 KWord Parameter Blocks and 32 KWord Main Blocks. The M28W320FST and M28W640FST have the Parameter Blocks at the top of the memory address space while the M28W320FSB and M28W640FSB locate the Parameter Blocks starting from the bottom. Refer to Table 1., Figure 5. and Figure 6. for a detailed description of the devices memory architecture and map.

All devices M28W640FSB are equipped with hardware and software block protection features to avoid unwanted program/erase (modify) or read of the Flash memory content:
Hardware Protection:
    When VPP VPPLK all blocks are protected against program or erase.
Software Protection thanks to KRYPTO Security Features:
   Modify Protection: volatile and nonvolatile.   Read Protection.

The KRYPTO Security features M28W640FSB are described in a dedicated Application Note. Please contact STMicroelectronics for further details. Two registers are available for protection purpose:
The Protection Register
The KRYPTO Protection Register.

The Protection Register M28W640FSB is a 192 bit Protection Register to increase the protection of a system design. The Protection Register is divided into a 64 bit segment and a 128 bit segment. The 64 bit segment contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. Figure 7., shows the Protection Register Memory Map.

The KRYPTO Protection Register M28W640FSB is used to manage the Modify and Read protection modes. It also features a Device Authentication mechanism. The KRYPTO Protection Register is described in a dedicated Application Note. Please contact STMicroelectronics for further details.

Each block M28W640FSB can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations.

The end of a program or erase operation M28W640FSB can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. All the devices are offered in a TBGA64 (10 x 13mm) package.

In order to meet environmental requirements, ST offers the M28W320FS and M28W640FS in ECOPACK® packages. ECOPACK packages are Lead-free. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label.

ECOPACK M28W640FSB is an ST trademark. ECOPACK specifications are available at: www.st.com.

All devices M28W640FSB are supplied with all the bits erased (set to '1').




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