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Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:MAT Pack:N/A D/C:N/A Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:PANASONI Pack:TO-252 D/C:5000 Vendor:Other Category:Other
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The 2SD1247 is designed as one kind of NPN epitaxial plannar silicon transistors for large current driving applications, power supplies, relay drivers, lamp drivers and electrical equipment applications.2SD1247 has three...
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The 2SD1246 is designed as one kind of NPN epitaxial plannar silicon transistors for large current driving applications, power supplies, relay drivers, lamp drivers and electrical equipment applications.2SD1246 has three...
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1243 features:
·With TO-3PN package·Wide area of safe operation
Vendor:Other Category:Other
The 2SD1238L features:
·With TO-3PN package·Low collector saturation voltage·Wide area of safe operation·Complement to type 2SB922L
Mfg:SANY Pack:TO-3P D/C:98+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1237L features:
·With TO-220C package·Complement to type 2SB921L·Low collector saturation voltage·Large current capacity.
Vendor:Other Category:Other
The 2SD1236L features:
·With TO-220C package·Complement to type 2SB920L·Low collector saturation voltage·Large current capacity.
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Mfg:5000 Pack:ROHM Vendor:Other Category:Other
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The 2SD1226M is a transistor,silicon npn epitaxial type.
Features of the 2SD1226M are:(1)high power Pc=1W; (2)high breakdown voltage and large current capacity:Vceo=80V,Ic=700mA; (3)complementary pair with 2SB910M,2SB12...
Vendor:Other Category:Other
The 2SD1224 is a transistor,silicon npn epitaxial type(pct process)(darlington).
Features of the 2SD1224 are:(1)high dc current gain:hFE(1)=4000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max).
The absolute maximum...
Vendor:Other Category:Other
The 2SD1223 is a transistor,silicon npn epitaxial type(pct process)(darlington).
Features of the 2SD1223 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2...
Vendor:Other Category:Other
The 2SD1222 is a transistor,silicon npn epitaxial type(pct process)(darlington).
Features of the 2SD1222 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2...
Vendor:Other Category:Other
The 2SD1221 is a transistor,silicon npn triple diffused type(pct process).
Features of the 2SD1221 are:(1)low collector saturation voltage;Vce(sat)=0.4V(typ.); (2)high power dissipation:pc=20W; (3)complementary to 2SB90...
Mfg:TOSHIBA Pack:TO-252 D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1218 is a medium speed power switching.
Features of the 2SD1218are:(1)built-in 60V zener diode between C and B; (2)uniformity in breakdown voltage; (3)large energy handling capability:Es/b=50mj(min); (4)high spee...
Vendor:Other Category:Other
The 2SD1216 is a si npn planar darlington.
Features of the 2SD1216 are:(1)buit-in 30V zener diode between C and B; (2)uniformity in breakdown voltage; (3)large emergy handing capability:Ea/b=200mj(min); (4)high speed sw...
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Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1210 is a npn silicon epitaxial darlington transistor.
Features of the 2SD1210 are:(1)high dc current gain; (2)low collector saturation voltage.
The absolute maximum ratings of the 2SD1210 can be summarized as:(...
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
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Mfg:HITACHI Pack:TO92L D/C:05+ Vendor:Other Category:Other
Mfg:TOS Pack:TO-3 Vendor:Other Category:Other
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Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
Mfg:5000 Pack:Panasonic Vendor:Other Category:Other
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The 2SD1196 features:
·With TO-220 package·High DC current gain.·High current capacity and wide ASO.·Low saturation voltage·DARLINGTON
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1192 features:
`Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)`High DC Current Gain : hFE= 2000(Min) @IC= 5.0A`Low Saturation Voltage`Complement to Type 2SB882
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1187 is a transistor,sillicon npn triple diffused type.
Features of the 2SD1187 are:(1)low collector-emitter saturation voltageL:Vce(sat)=0.5V; (2)high collector power dissipation:Pc=80W(Tc=25).
The absolute max...
Vendor:Other Category:Other
The 2SD1186 is a silicon npn triple diffused power switching.
The absolute maximum ratings of the 2SD1186 can be summarized as:(1)Vcbo=1200V; (2)Vceo=800V; (3)Vebo=6V; (4)Ic=5A; (5)iC(peak):7A; (6)Pc:50W; (7)Tj:150; (8)...
Mfg:HIT Pack:TO-3 D/C:1000 Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-126 D/C:08+ Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
2SD1172 is si npn triple diffused junction mesa.
Features of the 2SD1172 are:(1)built in damper diode on chip; (2)minimize component counts and simplifies circuitry; (3)high voltage,high power,high reliability; (4)wide ...
Vendor:Other Category:Other
2SD1169 is si npn triple diffused planar darlington.
Features of the 2SD1169 are:(1)high hFE;(2)high Vebo.
The absolute maximum ratings of the 2SD1169 can be summarized as:(1)Vcbo=150V; (2)Vceo:80V; (3)Vebo=20V; (4)Icp...
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1166 is a kind of silicon NPN triple diffused mesa type (darlington power). It is designed for high power switching application, AC/DC motor control application and inverter application.
There are some features o...
Vendor:Other Category:Other
2SD1164-Z is designed for low frequency amplifier and switching,especially in hybird integrated circuits.
Features of the 2SD1164-Z are:(1)high hFE=2000 to 30000.
The absolute maximum ratings of the 2SD1164-Z can be su...
Vendor:Other Category:Other
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1162 features:
·High DC Current Gain- : hFE= 400(Min.)@IC= 2A·High Switching Speed·Low Collector Saturation Voltage
Mfg:TOSHIBA Pack:TO-252 D/C:09+ Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1159 feature:
`With TO-220 package
Vendor:Other Category:Other
The 2SD1158 features:
·With TO-220 package·High speed switching·High DC current gain·Low collector saturation voltage
Vendor:Other Category:Other
The 2SD1157 is a triple diffused planer type high speed switching.Features of the 2SD1157 are :(1)high speed switching; (2)highD.C. current gain; (3)low saturation voltage; (4)high reliability.
The absolute maximum rati...
Vendor:Other Category:Other
The 2SD1154 features:
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V (Min)·Wide Area of Safe Operation
Mfg:SANYO Pack:TO-92 D/C:06+ Vendor:Other Category:Other
Mfg:PAN Vendor:Other Category:Other
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Mfg:SANYO Pack:TO-92 D/C:02+ Vendor:Other Category:Other
Mfg:5000 Pack:toshiba Vendor:Other Category:Other
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The 2SD1137 features:
·With TO-220C package·Complement to type 2SB860
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The 2SD1136 features:
·With TO-220C package·High collector-base breakdown voltage : VCBO=200V(min)
Vendor:Other Category:Other
Vendor:Other Category:Other
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The 2SD1133WC is one member of the 2SD1133 family which is designed as the silicon NPN triple diffused that can be used in low frequency power amplifier complementary pair with 2SB857 and 2SB858. The absolute maximum rat...
Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD113 is a silicon npn diffused junction transistor.
Features of the 2SD113 are:(1)audio power amplifier power switching application DC-DC converter and regulator applications; (2)Pc=200W(Tc=25); (3)Ic=30A; (4)Vcbo...
Vendor:Other Category:Other
The 2SD1127 is a silicon npn triple diffused power switching.
The absolute maximum ratings of the 2SD1127 can be summarized as:(1)collector to base voltage:120V; (2)collector to emitter voltage:120V; (3)emitter to base ...
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:TOSHIBA Pack:TO-220 D/C:08+ Vendor:Other Category:Other
Mfg:PANASONI Pack:SOT-89 D/C:1000 Vendor:Other Category:Other
Vendor:Other Category:Other
The 2SD1118 is a triple diffused planer type.
Features of the 2SD1118 are:(1)high speed switching ; (2)high d.c. current gain; (3)low saturation voltage; (4)high reliability.
The absolute maximum ratings of the 2SD1118...
Vendor:Other Category:Other
The 2SD1115K features:
·With TO-220 package·DARLINGTON
Mfg:HIT Pack:TO-220 D/C:05+/06+ Vendor:Other Category:Other
Mfg:5000 Pack:HITACHI Vendor:Other Category:Other
Mfg:HIT Pack:TO-220 D/C:05+/06+ Vendor:Other Category:Other
Mfg:TOSHIBA Pack:02+ D/C:220 Vendor:Other Category:Other
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