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2SD1199

Features: High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.Specifications Pa...

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2SD1199: Features: High foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.Low noise voltage NV.M type package allowing easy automatic an...

2SD1199 Data Sheet

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Part Number:
2SD1199
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VEBO.
Low noise voltage NV.
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.




Specifications

Parameter Symbol Rating Unit
Collector to base voltage VCBO 50 V
Collector to emitter voltage VCEO 40 V
Emitter to base voltage VEBO 15 V
Peak collector current ICP 100 mA
Collector current IC 50 mA

Collector power dissipation

 PC 400 mW
Junction temperature Tj 150
Storage temperature Tstg −55 ~+150  



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