2SD1000

The 2SD1000 is designed as the NPN epitaxial planar silicon transistor that has three points of features:(1)World standard miniature package: SOT-89; (2)High collector to base voltage: VCBO 100V; (3)low collector saturation voltage: VCE(sat) < 0.4 V (VC = 500 mA, IB = 50 mA).

The absolute maximum ratings of the 2SD1000 can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 50 V;(3)emitter-base voltage: 5.0 V;(4)collector current: 0.7 or 1.0 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 2.0 W.

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 100 nA;(2)Emitter cutoff current: 100 nA;(3)DC current gain: 90 to 400;(4)Collector saturation voltage: 0.12 to 0.40 V;(5)Base saturation voltage: 0.90 to 1.2 V;(6)Base-emitter voltage: 600 to 700 mV;(7)Gain bandwidth product: 110 MHz;(8)Output capacitance: 13 pF. If you want to know more information such as the electrical characteristics about the 2SD1000, please download the datasheet in www.seekic.com or www.chinaicmart.com.