2SD1005-BV

The 2SD1005-BV is one member of the 2SD1005 family which is designed as the NPN epitaxial planar silicon transistor that has three points of features:(1)World standard miniature package: SOT-89; (2)High collector to base voltage: VCBO 100V; (3)Excellent dc current gain linearity: hFE=80 TYP. (VCE=2 V, IC=500 mA).

The absolute maximum ratings of the 2SD1005-BV can be summarized as:(1)collector-base voltage: 100 V;(2)collector-emitter voltage: 80 V;(3)emitter-base voltage: 5 V;(4)collector current: 1 or 1.5 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 2.0 W.

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 100 nA;(2)Emitter cutoff current: 100 nA;(3)DC current gain: 90 to 400;(4)Collector saturation voltage: 0.15 to 0.5 V;(5)Base saturation voltage: 0.90 to 1.5 V;(6)Base-emitter voltage: 600 to 700 mV;(7)Gain bandwidth product: 160 MHz;(8)Output capacitance: 12 pF. If you want to know more information such as the electrical characteristics about the 2SD1005-BV, please download the datasheet in www.seekic.com or www.chinaicmart.com.